Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy

Samuel H. Margueron, Patrice Bourson, Simon Gautier, Ali Soltani, David Troadec, Jean Claude De Jaeger, Andrei A. Sirenko, Abdallah Ougazzaden

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Circular pillar structures of various diameters have been prepared by a focused ion beam (FIB) through a 4-μm-thick epitaxial gallium nitride (GaN) film grown on a sapphire substrate. Micro-Raman scattering is used to measure residual stresses based on the shift of an E2 phonon in the GaN film. Measurements of residual stress profiles are compared to Winkler's elastic formalism for a shear-supported film with proper boundary conditions. The model, optimized at a cleave edge, is compared to the experimental shape of stress variations inside and outside the pillar structures.

Original languageEnglish (US)
Pages (from-to)5321-5326
Number of pages6
JournalJournal of Crystal Growth
Volume310
Issue number24
DOIs
StatePublished - Dec 1 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A1. Focus ion beam
  • A1. Raman scattering
  • A1. Residual stresses
  • A1. Stresses
  • A3. Metalorganic vapour phase epitaxy
  • B2. Semiconducting gallium compounds

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