Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy

Samuel H. Margueron; Patrice Bourson; Simon Gautier; Ali Soltani; David Troadec; Jean Claude De Jaeger; Andrei A. Sirenko; Abdallah Ougazzaden

doi:10.1016/j.jcrysgro.2008.09.145

Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy

Samuel H. Margueron, Patrice Bourson, Simon Gautier, Ali Soltani, David Troadec, Jean Claude De Jaeger, Andrei A. Sirenko, Abdallah Ougazzaden

Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Circular pillar structures of various diameters have been prepared by a focused ion beam (FIB) through a 4-μm-thick epitaxial gallium nitride (GaN) film grown on a sapphire substrate. Micro-Raman scattering is used to measure residual stresses based on the shift of an E₂ phonon in the GaN film. Measurements of residual stress profiles are compared to Winkler's elastic formalism for a shear-supported film with proper boundary conditions. The model, optimized at a cleave edge, is compared to the experimental shape of stress variations inside and outside the pillar structures.

Original language	English (US)
Pages (from-to)	5321-5326
Number of pages	6
Journal	Journal of Crystal Growth
Volume	310
Issue number	24
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.145
State	Published - Dec 1 2008

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A1. Focus ion beam
A1. Raman scattering
A1. Residual stresses
A1. Stresses
A3. Metalorganic vapour phase epitaxy
B2. Semiconducting gallium compounds

Access to Document

10.1016/j.jcrysgro.2008.09.145

Cite this

@article{af361655374a4f80b0933e905e8916e1,

title = "Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy",

abstract = "Circular pillar structures of various diameters have been prepared by a focused ion beam (FIB) through a 4-μm-thick epitaxial gallium nitride (GaN) film grown on a sapphire substrate. Micro-Raman scattering is used to measure residual stresses based on the shift of an E2 phonon in the GaN film. Measurements of residual stress profiles are compared to Winkler's elastic formalism for a shear-supported film with proper boundary conditions. The model, optimized at a cleave edge, is compared to the experimental shape of stress variations inside and outside the pillar structures.",

keywords = "A1. Focus ion beam, A1. Raman scattering, A1. Residual stresses, A1. Stresses, A3. Metalorganic vapour phase epitaxy, B2. Semiconducting gallium compounds",

author = "Margueron, {Samuel H.} and Patrice Bourson and Simon Gautier and Ali Soltani and David Troadec and {De Jaeger}, {Jean Claude} and Sirenko, {Andrei A.} and Abdallah Ougazzaden",

year = "2008",

month = dec,

day = "1",

doi = "10.1016/j.jcrysgro.2008.09.145",

language = "English (US)",

volume = "310",

pages = "5321--5326",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "24",

}

TY - JOUR

T1 - Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy

AU - Margueron, Samuel H.

AU - Bourson, Patrice

AU - Gautier, Simon

AU - Soltani, Ali

AU - Troadec, David

AU - De Jaeger, Jean Claude

AU - Sirenko, Andrei A.

AU - Ougazzaden, Abdallah

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Circular pillar structures of various diameters have been prepared by a focused ion beam (FIB) through a 4-μm-thick epitaxial gallium nitride (GaN) film grown on a sapphire substrate. Micro-Raman scattering is used to measure residual stresses based on the shift of an E2 phonon in the GaN film. Measurements of residual stress profiles are compared to Winkler's elastic formalism for a shear-supported film with proper boundary conditions. The model, optimized at a cleave edge, is compared to the experimental shape of stress variations inside and outside the pillar structures.

AB - Circular pillar structures of various diameters have been prepared by a focused ion beam (FIB) through a 4-μm-thick epitaxial gallium nitride (GaN) film grown on a sapphire substrate. Micro-Raman scattering is used to measure residual stresses based on the shift of an E2 phonon in the GaN film. Measurements of residual stress profiles are compared to Winkler's elastic formalism for a shear-supported film with proper boundary conditions. The model, optimized at a cleave edge, is compared to the experimental shape of stress variations inside and outside the pillar structures.

KW - A1. Focus ion beam

KW - A1. Raman scattering

KW - A1. Residual stresses

KW - A1. Stresses

KW - A3. Metalorganic vapour phase epitaxy

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=57049125586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57049125586&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.09.145

DO - 10.1016/j.jcrysgro.2008.09.145

M3 - Article

AN - SCOPUS:57049125586

SN - 0022-0248

VL - 310

SP - 5321

EP - 5326

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 24

ER -

Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this