Resistance to cracking of a stretchable semiconductor: Speed of crack propagation for varying energy release rate

Sheng Liu, Hee C. Lim, Min Qu, John F. Federici, Gordon A. Thomas, Helena Gleskova, Sigurd Wagner

Research output: Contribution to journalConference articlepeer-review

Abstract

We have measured and calculated the propagation velocity of successive cracks in a single sample of amorphous SiNx as a function of energy release rate. We have obtained the conditions for controlled, repetitive crack formation by using a substrate of compliant plastic that survives the cracking of a thin film formed on it. We have recorded the crack velocity curves using high-speed micro-photography using dark field illumination. Under uniform, uniaxial tensile strain, the films crack in an array of essentially straight, parallel lines, if the increase of the strain density is slow. We find reasonable agreement in the comparison of theory and experiment and find a linear relationship between the initial velocity and energy release rate threshold. Consequently, in cases where the theoretical agreement with the data is reasonable, the successive cracks show velocity curves that scale with each other.

Original languageEnglish (US)
Pages (from-to)173-178
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume795
DOIs
StatePublished - 2003
EventThin Films - Stresses and Mechanical Properties X - Boston, MA., United States
Duration: Dec 1 2003Dec 5 2003

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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