Resonance Raman scattering by interface phonons in the magnetic field in GaAs/AlAs superlattices

D. N. Mirlin; A. A. Sirenko; R. Planel

doi:10.1016/0038-1098(94)90371-9

Resonance Raman scattering by interface phonons in the magnetic field in GaAs/AlAs superlattices

D. N. Mirlin, A. A. Sirenko, R. Planel

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4 Scopus citations

Abstract

The dependence of the intensity of resonant Raman scattering by interface (IF) phonons in GaAs/AlAs superlattices on magnetic field, temperature, and pumping power have been investigated. IF phonon spectra, forbidden according to the momentum conservation condition, were observed in a magnetic field. Oscillations of the IF phonon intensity vs. magnetic field, corresponding to the resonance of the exciting light energy with the levels of magneto-excitons which are the intermediate states in the scattering process, have been observed. The IF phonon intensity decreases with increasing temperature. We consider such behaviour to be connected with the temperature-induced delocalization of magneto-excitons bound near static defects which are responsible for the relaxation of the momentum conservation condition. The delocalization energy is observed to increase with magnetic field.

Original language	English (US)
Pages (from-to)	545-549
Number of pages	5
Journal	Solid State Communications
Volume	91
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(94)90371-9
State	Published - Aug 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(94)90371-9

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@article{92c30d32072b4643944a2fac31e3f557,

title = "Resonance Raman scattering by interface phonons in the magnetic field in GaAs/AlAs superlattices",

abstract = "The dependence of the intensity of resonant Raman scattering by interface (IF) phonons in GaAs/AlAs superlattices on magnetic field, temperature, and pumping power have been investigated. IF phonon spectra, forbidden according to the momentum conservation condition, were observed in a magnetic field. Oscillations of the IF phonon intensity vs. magnetic field, corresponding to the resonance of the exciting light energy with the levels of magneto-excitons which are the intermediate states in the scattering process, have been observed. The IF phonon intensity decreases with increasing temperature. We consider such behaviour to be connected with the temperature-induced delocalization of magneto-excitons bound near static defects which are responsible for the relaxation of the momentum conservation condition. The delocalization energy is observed to increase with magnetic field.",

author = "Mirlin, {D. N.} and Sirenko, {A. A.} and R. Planel",

year = "1994",

month = aug,

doi = "10.1016/0038-1098(94)90371-9",

language = "English (US)",

volume = "91",

pages = "545--549",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "7",

}

TY - JOUR

T1 - Resonance Raman scattering by interface phonons in the magnetic field in GaAs/AlAs superlattices

AU - Mirlin, D. N.

AU - Sirenko, A. A.

AU - Planel, R.

PY - 1994/8

Y1 - 1994/8

N2 - The dependence of the intensity of resonant Raman scattering by interface (IF) phonons in GaAs/AlAs superlattices on magnetic field, temperature, and pumping power have been investigated. IF phonon spectra, forbidden according to the momentum conservation condition, were observed in a magnetic field. Oscillations of the IF phonon intensity vs. magnetic field, corresponding to the resonance of the exciting light energy with the levels of magneto-excitons which are the intermediate states in the scattering process, have been observed. The IF phonon intensity decreases with increasing temperature. We consider such behaviour to be connected with the temperature-induced delocalization of magneto-excitons bound near static defects which are responsible for the relaxation of the momentum conservation condition. The delocalization energy is observed to increase with magnetic field.

AB - The dependence of the intensity of resonant Raman scattering by interface (IF) phonons in GaAs/AlAs superlattices on magnetic field, temperature, and pumping power have been investigated. IF phonon spectra, forbidden according to the momentum conservation condition, were observed in a magnetic field. Oscillations of the IF phonon intensity vs. magnetic field, corresponding to the resonance of the exciting light energy with the levels of magneto-excitons which are the intermediate states in the scattering process, have been observed. The IF phonon intensity decreases with increasing temperature. We consider such behaviour to be connected with the temperature-induced delocalization of magneto-excitons bound near static defects which are responsible for the relaxation of the momentum conservation condition. The delocalization energy is observed to increase with magnetic field.

UR - http://www.scopus.com/inward/record.url?scp=0028483016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028483016&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(94)90371-9

DO - 10.1016/0038-1098(94)90371-9

M3 - Article

AN - SCOPUS:0028483016

SN - 0038-1098

VL - 91

SP - 545

EP - 549

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Resonance Raman scattering by interface phonons in the magnetic field in GaAs/AlAs superlattices

Abstract

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