Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

A. A. Sirenko; T. Ruf; N. N. Ledentsov; A. Yu Egorov; P. S. Kop'ev; V. M. Ustinov; A. E. Zhukov

doi:10.1016/0038-1098(95)00624-9

Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

A. A. Sirenko, T. Ruf, N. N. Ledentsov, A. Yu Egorov, P. S. Kop'ev, V. M. Ustinov, A. E. Zhukov

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report on efficient resonant spin-flip Raman scattering due to localized heavy-hole excitons in single submonolayer InAs insertions in a GaAs matrix. Exciton, heavy-hole and electron g factors are directly measured for samples with different average thicknesses of InAs. The large size uniformity of the InAs islands manifests itself in very narrow heavy-and light-hole exciton photoluminescence peaks which also allow us to measure exciton g factors by magneto-luminescence spectroscopy.

Original language	English (US)
Pages (from-to)	169-174
Number of pages	6
Journal	Solid State Communications
Volume	97
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(95)00624-9
State	Published - Jan 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

A. nanostructures
A. semiconductors
E. inelastic light scattering
E. luminescence

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10.1016/0038-1098(95)00624-9

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title = "Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures",

abstract = "We report on efficient resonant spin-flip Raman scattering due to localized heavy-hole excitons in single submonolayer InAs insertions in a GaAs matrix. Exciton, heavy-hole and electron g factors are directly measured for samples with different average thicknesses of InAs. The large size uniformity of the InAs islands manifests itself in very narrow heavy-and light-hole exciton photoluminescence peaks which also allow us to measure exciton g factors by magneto-luminescence spectroscopy.",

keywords = "A. nanostructures, A. semiconductors, E. inelastic light scattering, E. luminescence",

author = "Sirenko, {A. A.} and T. Ruf and Ledentsov, {N. N.} and Egorov, {A. Yu} and Kop'ev, {P. S.} and Ustinov, {V. M.} and Zhukov, {A. E.}",

year = "1996",

month = jan,

doi = "10.1016/0038-1098(95)00624-9",

language = "English (US)",

volume = "97",

pages = "169--174",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "3",

}

TY - JOUR

T1 - Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

AU - Sirenko, A. A.

AU - Ruf, T.

AU - Ledentsov, N. N.

AU - Egorov, A. Yu

AU - Kop'ev, P. S.

AU - Ustinov, V. M.

AU - Zhukov, A. E.

PY - 1996/1

Y1 - 1996/1

N2 - We report on efficient resonant spin-flip Raman scattering due to localized heavy-hole excitons in single submonolayer InAs insertions in a GaAs matrix. Exciton, heavy-hole and electron g factors are directly measured for samples with different average thicknesses of InAs. The large size uniformity of the InAs islands manifests itself in very narrow heavy-and light-hole exciton photoluminescence peaks which also allow us to measure exciton g factors by magneto-luminescence spectroscopy.

AB - We report on efficient resonant spin-flip Raman scattering due to localized heavy-hole excitons in single submonolayer InAs insertions in a GaAs matrix. Exciton, heavy-hole and electron g factors are directly measured for samples with different average thicknesses of InAs. The large size uniformity of the InAs islands manifests itself in very narrow heavy-and light-hole exciton photoluminescence peaks which also allow us to measure exciton g factors by magneto-luminescence spectroscopy.

KW - A. nanostructures

KW - A. semiconductors

KW - E. inelastic light scattering

KW - E. luminescence

UR - http://www.scopus.com/inward/record.url?scp=0029779122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029779122&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(95)00624-9

DO - 10.1016/0038-1098(95)00624-9

M3 - Article

AN - SCOPUS:0029779122

SN - 0038-1098

VL - 97

SP - 169

EP - 174

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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