We report on efficient resonant spin-flip Raman scattering due to localized heavy-hole excitons in single submonolayer InAs insertions in a GaAs matrix. Exciton, heavy-hole and electron g factors are directly measured for samples with different average thicknesses of InAs. The large size uniformity of the InAs islands manifests itself in very narrow heavy-and light-hole exciton photoluminescence peaks which also allow us to measure exciton g factors by magneto-luminescence spectroscopy.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry
- A. nanostructures
- A. semiconductors
- E. inelastic light scattering
- E. luminescence