Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

A. A. Sirenko, T. Ruf, N. N. Ledentsov, A. Yu Egorov, P. S. Kop'ev, V. M. Ustinov, A. E. Zhukov

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We report on efficient resonant spin-flip Raman scattering due to localized heavy-hole excitons in single submonolayer InAs insertions in a GaAs matrix. Exciton, heavy-hole and electron g factors are directly measured for samples with different average thicknesses of InAs. The large size uniformity of the InAs islands manifests itself in very narrow heavy-and light-hole exciton photoluminescence peaks which also allow us to measure exciton g factors by magneto-luminescence spectroscopy.

Original languageEnglish (US)
Pages (from-to)169-174
Number of pages6
JournalSolid State Communications
Volume97
Issue number3
DOIs
StatePublished - Jan 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Keywords

  • A. nanostructures
  • A. semiconductors
  • E. inelastic light scattering
  • E. luminescence

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