Resonant tunneling in partially disordered silicon nanostructures

L. Tsybeskov, G. F. Grom, R. Krishnan, L. Montes, P. M. Fauchet, D. Kovalev, J. Diener, V. Timoshenko, F. Koch, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, D. J. Lockwood, Y. M. Niquet, C. Delerue, G. Allan

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

Original languageEnglish (US)
Pages (from-to)552-558
Number of pages7
JournalEurophysics Letters
Issue number4
StatePublished - Aug 11 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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