Resonant tunneling in partially disordered silicon nanostructures

L. Tsybeskov; G. F. Grom; R. Krishnan; L. Montes; P. M. Fauchet; D. Kovalev; J. Diener; V. Timoshenko; F. Koch; J. P. McCaffrey; J. M. Baribeau; G. I. Sproule; D. J. Lockwood; Y. M. Niquet; C. Delerue; G. Allan

doi:10.1209/epl/i2001-00451-1

Resonant tunneling in partially disordered silicon nanostructures

L. Tsybeskov, G. F. Grom, R. Krishnan, L. Montes, P. M. Fauchet, D. Kovalev, J. Diener, V. Timoshenko, F. Koch, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, D. J. Lockwood, Y. M. Niquet, C. Delerue, G. Allan

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO₂ layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

Original language	English (US)
Pages (from-to)	552-558
Number of pages	7
Journal	Europhysics Letters
Volume	55
Issue number	4
DOIs	https://doi.org/10.1209/epl/i2001-00451-1
State	Published - Aug 11 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1209/epl/i2001-00451-1

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Tsybeskov, L., Grom, G. F., Krishnan, R., Montes, L., Fauchet, P. M., Kovalev, D., Diener, J., Timoshenko, V., Koch, F., McCaffrey, J. P., Baribeau, J. M., Sproule, G. I., Lockwood, D. J., Niquet, Y. M., Delerue, C., & Allan, G. (2001). Resonant tunneling in partially disordered silicon nanostructures. Europhysics Letters, 55(4), 552-558. https://doi.org/10.1209/epl/i2001-00451-1

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title = "Resonant tunneling in partially disordered silicon nanostructures",

abstract = "Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.",

author = "L. Tsybeskov and Grom, {G. F.} and R. Krishnan and L. Montes and Fauchet, {P. M.} and D. Kovalev and J. Diener and V. Timoshenko and F. Koch and McCaffrey, {J. P.} and Baribeau, {J. M.} and Sproule, {G. I.} and Lockwood, {D. J.} and Niquet, {Y. M.} and C. Delerue and G. Allan",

year = "2001",

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doi = "10.1209/epl/i2001-00451-1",

language = "English (US)",

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pages = "552--558",

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T1 - Resonant tunneling in partially disordered silicon nanostructures

AU - Tsybeskov, L.

AU - Grom, G. F.

AU - Krishnan, R.

AU - Montes, L.

AU - Fauchet, P. M.

AU - Kovalev, D.

AU - Diener, J.

AU - Timoshenko, V.

AU - Koch, F.

AU - McCaffrey, J. P.

AU - Baribeau, J. M.

AU - Sproule, G. I.

AU - Lockwood, D. J.

AU - Niquet, Y. M.

AU - Delerue, C.

AU - Allan, G.

PY - 2001/8/11

Y1 - 2001/8/11

N2 - Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

AB - Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

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SP - 552

EP - 558

JO - Europhysics Letters

JF - Europhysics Letters

IS - 4

ER -

Resonant tunneling in partially disordered silicon nanostructures

Abstract

All Science Journal Classification (ASJC) codes

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