Skip to main navigation
Skip to search
Skip to main content
New Jersey Institute of Technology Home
Help & FAQ
Home
Profiles
Research units
Facilities
Federal Grants
Research output
Press/Media
Search by expertise, name or affiliation
Resonant tunneling in partially disordered silicon nanostructures
L. Tsybeskov
, G. F. Grom
, R. Krishnan
, L. Montes
, P. M. Fauchet
, D. Kovalev
, J. Diener
, V. Timoshenko
, F. Koch
, J. P. McCaffrey
, J. M. Baribeau
, G. I. Sproule
, D. J. Lockwood
, Y. M. Niquet
, C. Delerue
, G. Allan
Research output
:
Contribution to journal
›
Article
›
peer-review
40
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Resonant tunneling in partially disordered silicon nanostructures'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Si Nanocrystals
100%
Resonant Tunneling
100%
Partially Disordered
100%
Silicon Nanostructures
100%
Low Temperature
33%
Well-defined
33%
Angstrom
33%
Carrier Transport
33%
Valence Band
33%
Low Magnetic Field
33%
Size-and-shape
33%
Layered Structure
33%
Quantum Confinement Effect
33%
Nanocrystal Size
33%
SiO2 Layer
33%
Tight-binding
33%
Conductive Mechanism
33%
Switching Oscillation
33%
Tunnel Model
33%
Frequency Magnetic Field
33%
Nanocrystal Morphology
33%
N-shaped
33%
Hole Tunneling
33%
Negative Differential Conductance
33%
Alternating Current Conductivity
33%
Growth Direction
33%
Self-oscillation
33%
Chemistry
Magnetic Field
100%
Silicon
100%
Alternating Current Method
100%
Resonant Tunneling
100%
Valence Band
100%
Nanomaterial
100%
Physics
Magnetic Field
100%
Resonant Tunneling
100%
Alternating Current
100%
Self Oscillation
100%
Material Science
Nanocrystalline Material
100%
Silicon
100%
Carrier Transport
25%