Reverse resistance switching in polycrystalline Nb2O5 films

Younghun Jo, Hyunjun Sim, Hyunsang Hwang, Ken Ahn, Myung Hwa Jung

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The reverse resistance switching is observed in polycrystalline Nb 2O5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage VLH from low resistance (LR) to high resistance (HR) states is lower than VHL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition.

Original languageEnglish (US)
Pages (from-to)5676-5678
Number of pages3
JournalThin Solid Films
Volume518
Issue number20
DOIs
StatePublished - Aug 2 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Keywords

  • Magnetic polaron
  • Niobium oxides
  • Percolation
  • Resistance switching

Fingerprint Dive into the research topics of 'Reverse resistance switching in polycrystalline Nb<sub>2</sub>O<sub>5</sub> films'. Together they form a unique fingerprint.

Cite this