Reverse resistance switching in polycrystalline Nb2O5 films

Younghun Jo; Hyunjun Sim; Hyunsang Hwang; Ken Ahn; Myung Hwa Jung

doi:10.1016/j.tsf.2009.10.026

Reverse resistance switching in polycrystalline Nb₂O₅ films

Younghun Jo, Hyunjun Sim, Hyunsang Hwang, Ken Ahn, Myung Hwa Jung

Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The reverse resistance switching is observed in polycrystalline Nb ₂O₅ film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage V_LH from low resistance (LR) to high resistance (HR) states is lower than V_HL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition.

Original language	English (US)
Pages (from-to)	5676-5678
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2009.10.026
State	Published - Aug 2 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Magnetic polaron
Niobium oxides
Percolation
Resistance switching

Access to Document

10.1016/j.tsf.2009.10.026

Cite this

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title = "Reverse resistance switching in polycrystalline Nb2O5 films",

abstract = "The reverse resistance switching is observed in polycrystalline Nb 2O5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage VLH from low resistance (LR) to high resistance (HR) states is lower than VHL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition.",

keywords = "Magnetic polaron, Niobium oxides, Percolation, Resistance switching",

author = "Younghun Jo and Hyunjun Sim and Hyunsang Hwang and Ken Ahn and Jung, {Myung Hwa}",

note = "Funding Information: The work by K.H.A. is supported by U.S. Department of Energy, Basic Science, Office of Science , under contract # W–31–109–ENG–38 . ",

year = "2010",

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T1 - Reverse resistance switching in polycrystalline Nb2O5 films

AU - Jo, Younghun

AU - Sim, Hyunjun

AU - Hwang, Hyunsang

AU - Ahn, Ken

AU - Jung, Myung Hwa

N1 - Funding Information: The work by K.H.A. is supported by U.S. Department of Energy, Basic Science, Office of Science , under contract # W–31–109–ENG–38 .

PY - 2010/8/2

Y1 - 2010/8/2

N2 - The reverse resistance switching is observed in polycrystalline Nb 2O5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage VLH from low resistance (LR) to high resistance (HR) states is lower than VHL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition.

AB - The reverse resistance switching is observed in polycrystalline Nb 2O5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage VLH from low resistance (LR) to high resistance (HR) states is lower than VHL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition.

KW - Magnetic polaron

KW - Niobium oxides

KW - Percolation

KW - Resistance switching

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