Reversible degradation of photoluminescence in Si/SiGe three dimensional nanostructures

Nikhil Modi, Leonid Tsybeskov, David J. Lockwood, Xiao Z. Wu, Jean Marc Baribeau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to - 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation.

Original languageEnglish (US)
Title of host publicationFunctional Semiconductor Nanocrystals and Metal-Hybrid Structures
Pages43-48
Number of pages6
DOIs
StatePublished - 2011
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 3 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1409
ISSN (Print)0272-9172

Other

Other2011 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/1112/3/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Reversible degradation of photoluminescence in Si/SiGe three dimensional nanostructures'. Together they form a unique fingerprint.

Cite this