TY - GEN
T1 - Reversible degradation of photoluminescence in Si/SiGe three dimensional nanostructures
AU - Modi, Nikhil
AU - Tsybeskov, Leonid
AU - Lockwood, David J.
AU - Wu, Xiao Z.
AU - Baribeau, Jean Marc
N1 - Funding Information:
This work was supported by HP Labs Innovation Award and US National Science Foundation. We thank G. Parent for TEM sample preparation.
PY - 2011
Y1 - 2011
N2 - We report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to - 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation.
AB - We report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to - 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation.
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U2 - 10.1557/opl.2012.730
DO - 10.1557/opl.2012.730
M3 - Conference contribution
AN - SCOPUS:84879481132
SN - 9781627482233
T3 - Materials Research Society Symposium Proceedings
SP - 43
EP - 48
BT - Functional Semiconductor Nanocrystals and Metal-Hybrid Structures
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 3 December 2011
ER -