Reversible degradation of photoluminescence in Si/SiGe three dimensional nanostructures

Nikhil Modi, Leonid Tsybeskov, David J. Lockwood, Xiao Z. Wu, Jean Marc Baribeau

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to - 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation.

Original languageEnglish (US)
Title of host publicationFunctional Semiconductor Nanocrystals and Metal-Hybrid Structures
Number of pages6
StatePublished - 2011
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 3 2011

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2011 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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