Role of bulk HfO2 and interfacial SiO2 layer in breakdown characteristics of TiN/HfO2/SiO2/Si gate stacks

N. Rahim; N. A. Chowdhury; Durgamadhab Misra

doi:10.1149/1.2779597

Role of bulk HfO₂ and interfacial SiO₂ layer in breakdown characteristics of TiN/HfO₂/SiO₂/Si gate stacks

N. Rahim, N. A. Chowdhury, Durgamadhab Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Defect generation in the interfacial SiO₂ layer seems to be the leading breakdown mechanism in metal/high-κ/interfacial layer/Si gate stack. In this work we reaffirm the claim by studying systematically the breakdown mechanisms of HfO₂ and SiO₂ separately, deposited under same growth conditions. Individual breakdown characteristics of HfO₂ without any interfacial layer using MIM capacitors and in situ steam grown (ISSG) SiO₂ MOS capacitors with identical thicknesses were compared (I-t, Stress-induced leakage current) to that of the high-κ/IL/metal gate stack. It was observed that charge trapping and stress-induced trap formation in the interfacial layer contmues to be the soft spot for grate stack breakdown

Original language	English (US)
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages	629-638
Number of pages	10
Volume	11
Edition	4
DOIs	https://doi.org/10.1149/1.2779597
State	Published - Dec 1 2007
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: Oct 8 2007 → Oct 10 2007

Other

Other	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	10/8/07 → 10/10/07

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.2779597

Cite this

@inproceedings{fec228f8d4f94fae9136368eeebedf04,

title = "Role of bulk HfO2 and interfacial SiO2 layer in breakdown characteristics of TiN/HfO2/SiO2/Si gate stacks",

abstract = "Defect generation in the interfacial SiO2 layer seems to be the leading breakdown mechanism in metal/high-κ/interfacial layer/Si gate stack. In this work we reaffirm the claim by studying systematically the breakdown mechanisms of HfO2 and SiO2 separately, deposited under same growth conditions. Individual breakdown characteristics of HfO2 without any interfacial layer using MIM capacitors and in situ steam grown (ISSG) SiO2 MOS capacitors with identical thicknesses were compared (I-t, Stress-induced leakage current) to that of the high-κ/IL/metal gate stack. It was observed that charge trapping and stress-induced trap formation in the interfacial layer contmues to be the soft spot for grate stack breakdown",

author = "N. Rahim and Chowdhury, {N. A.} and Durgamadhab Misra",

year = "2007",

month = dec,

day = "1",

doi = "10.1149/1.2779597",

language = "English (US)",

isbn = "9781566775700",

volume = "11",

pages = "629--638",

booktitle = "ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks",

edition = "4",

note = "5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting ; Conference date: 08-10-2007 Through 10-10-2007",

}

Rahim, N, Chowdhury, NA & Misra, D 2007, Role of bulk HfO₂ and interfacial SiO₂ layer in breakdown characteristics of TiN/HfO₂/SiO₂/Si gate stacks. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, vol. 11, pp. 629-638, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 10/8/07. https://doi.org/10.1149/1.2779597

Role of bulk HfO₂ and interfacial SiO₂ layer in breakdown characteristics of TiN/HfO₂/SiO₂/Si gate stacks. / Rahim, N.; Chowdhury, N. A.; Misra, Durgamadhab.

ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. Vol. 11 4. ed. 2007. p. 629-638.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Role of bulk HfO2 and interfacial SiO2 layer in breakdown characteristics of TiN/HfO2/SiO2/Si gate stacks

AU - Rahim, N.

AU - Chowdhury, N. A.

AU - Misra, Durgamadhab

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Defect generation in the interfacial SiO2 layer seems to be the leading breakdown mechanism in metal/high-κ/interfacial layer/Si gate stack. In this work we reaffirm the claim by studying systematically the breakdown mechanisms of HfO2 and SiO2 separately, deposited under same growth conditions. Individual breakdown characteristics of HfO2 without any interfacial layer using MIM capacitors and in situ steam grown (ISSG) SiO2 MOS capacitors with identical thicknesses were compared (I-t, Stress-induced leakage current) to that of the high-κ/IL/metal gate stack. It was observed that charge trapping and stress-induced trap formation in the interfacial layer contmues to be the soft spot for grate stack breakdown

AB - Defect generation in the interfacial SiO2 layer seems to be the leading breakdown mechanism in metal/high-κ/interfacial layer/Si gate stack. In this work we reaffirm the claim by studying systematically the breakdown mechanisms of HfO2 and SiO2 separately, deposited under same growth conditions. Individual breakdown characteristics of HfO2 without any interfacial layer using MIM capacitors and in situ steam grown (ISSG) SiO2 MOS capacitors with identical thicknesses were compared (I-t, Stress-induced leakage current) to that of the high-κ/IL/metal gate stack. It was observed that charge trapping and stress-induced trap formation in the interfacial layer contmues to be the soft spot for grate stack breakdown

UR - http://www.scopus.com/inward/record.url?scp=35548937653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35548937653&partnerID=8YFLogxK

U2 - 10.1149/1.2779597

DO - 10.1149/1.2779597

M3 - Conference contribution

AN - SCOPUS:35548937653

SN - 9781566775700

VL - 11

SP - 629

EP - 638

BT - ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks

T2 - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting

Y2 - 8 October 2007 through 10 October 2007

ER -