Role of bulk HfO2 and interfacial SiO2 layer in breakdown characteristics of TiN/HfO2/SiO2/Si gate stacks

N. Rahim, N. A. Chowdhury, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Defect generation in the interfacial SiO2 layer seems to be the leading breakdown mechanism in metal/high-κ/interfacial layer/Si gate stack. In this work we reaffirm the claim by studying systematically the breakdown mechanisms of HfO2 and SiO2 separately, deposited under same growth conditions. Individual breakdown characteristics of HfO2 without any interfacial layer using MIM capacitors and in situ steam grown (ISSG) SiO2 MOS capacitors with identical thicknesses were compared (I-t, Stress-induced leakage current) to that of the high-κ/IL/metal gate stack. It was observed that charge trapping and stress-induced trap formation in the interfacial layer contmues to be the soft spot for grate stack breakdown

Original languageEnglish (US)
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages629-638
Number of pages10
Volume11
Edition4
DOIs
StatePublished - Dec 1 2007
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 8 2007Oct 10 2007

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/8/0710/10/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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