TY - GEN
T1 - Role of hydrogen in dielectrics for electronics and optoelectronics devices
AU - Misra, D.
PY - 2013
Y1 - 2013
N2 - In silicon-based electronic and optoelectronic devices hydrogen plays a significant role in passivating silicon dangling bonds. This improves the device performance and reliability of the devices by producing a high quality Si-SiO2 interface. This work reviews the early use of hydrogen in standard silicon MOS devices with SiO2 as gate dielectric to recent devices with high-k gate stacks. Role of hydrogen's isotope deuterium is outlined. In addition, the impact of hydrogen in high-k gate dielectrics on silicon and germanium substrates is also discussed. Contribution of hydrogen/deuterium in photodiode performance is also briefly described.
AB - In silicon-based electronic and optoelectronic devices hydrogen plays a significant role in passivating silicon dangling bonds. This improves the device performance and reliability of the devices by producing a high quality Si-SiO2 interface. This work reviews the early use of hydrogen in standard silicon MOS devices with SiO2 as gate dielectric to recent devices with high-k gate stacks. Role of hydrogen's isotope deuterium is outlined. In addition, the impact of hydrogen in high-k gate dielectrics on silicon and germanium substrates is also discussed. Contribution of hydrogen/deuterium in photodiode performance is also briefly described.
UR - http://www.scopus.com/inward/record.url?scp=84885664909&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885664909&partnerID=8YFLogxK
U2 - 10.1149/05304.0033ecst
DO - 10.1149/05304.0033ecst
M3 - Conference contribution
AN - SCOPUS:84885664909
SN - 9781607683773
T3 - ECS Transactions
SP - 33
EP - 42
BT - Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices
T2 - Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting
Y2 - 12 May 2013 through 16 May 2013
ER -