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Role of hydrogen in Ge/HfO
2
/Al gate stacks subjected to negative bias temperature instability
N. Rahim,
D. Misra
Electrical and Computer Engineering
Research output
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Contribution to journal
›
Article
›
peer-review
9
Scopus citations
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Dive into the research topics of 'Role of hydrogen in Ge/HfO
2
/Al gate stacks subjected to negative bias temperature instability'. Together they form a unique fingerprint.
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Keyphrases
HfO2
100%
Gate Stack
100%
Negative Bias Temperature Instability
100%
Interface State Density
66%
Flat-band Voltage
66%
Stress-driven
33%
Dangling Bonds
33%
Molecular Hydrogen
33%
Power Law Dependence
33%
Stress Induced Leakage Current
33%
Shift Change
33%
Atomic Hydrogen
33%
Ge Surface
33%
Surface Nitridation
33%
Hydrogen Release
33%
Instability Characteristics
33%
N-value
33%
Engineering
Gate Stack
100%
Negative-Bias Temperature Instability
100%
Interface State
66%
Dangling Bond
33%
Stress Induced Leakage Current
33%
Atomic Hydrogen
33%
Molecular Hydrogen
33%
Ge Surface
33%
Material Science
Negative-Bias Temperature Instability
100%
Density
66%
Nitriding
33%