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Role of hydrogen in Ge/HfO
2
/Al gate stacks subjected to negative bias temperature instability
N. Rahim,
D. Misra
Electrical and Computer Engineering
Research output
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Article
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peer-review
9
Scopus citations
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2
/Al gate stacks subjected to negative bias temperature instability'. Together they form a unique fingerprint.
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Physics & Astronomy
hydrogen
100%
shift
65%
electric potential
58%
temperature
48%
leakage
44%
nitrogen
39%