Room temperature epitaxy of Al(100) on Si(111)

Marek Sosnowski, Samuel Ramac, Walter L. Brown, Young O. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There are a number of published reports on the epitaxial growth of Al(111) on Si(111) surface usually following a high temperature treatment of the Si surface in UHV. In contrast to these results, we have for the first time observed dominant epitaxial growth of Al(100) films on Si(111) surfaces that have been carefully cleaned and hydrogen terminated and not heated prior to effusion cell deposition of Al at room temperature in UHV. X-ray diffraction shows sharp and intense Al(200) diffraction, enhanced by post deposition annealing. Crystal quality and the dominance of Al(100) structure depend strongly on the substrate treatment and the off-cut angle, both of which control the steps on the Si(111) surface. The steps were found responsible for the epitaxial alignment of the film and the substrate lattices. Details of this alignment were observed in TEM cross-sectional images of the interface.

Original languageEnglish (US)
Title of host publicationMechanisms of Thin Film Evolution
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Pages213-218
Number of pages6
ISBN (Print)1558992162
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume317
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/3/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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