Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ≃ 1.5 μm is intense and narrow (≤15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ≃ 1.5 μm was demonstrated.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 7 1997|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)