Abstract
Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ≃ 1.5 μm is intense and narrow (≤15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ≃ 1.5 μm was demonstrated.
Original language | English (US) |
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Pages (from-to) | 1790-1792 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 14 |
DOIs | |
State | Published - Apr 7 1997 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)