Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, P. M. Fauchet, K. L. Moore, D. G. Hall

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Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ≃ 1.5 μm is intense and narrow (≤15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ≃ 1.5 μm was demonstrated.

Original languageEnglish (US)
Pages (from-to)1790-1792
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - Apr 7 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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