Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

L. Tsybeskov; S. P. Duttagupta; K. D. Hirschman; P. M. Fauchet; K. L. Moore; D. G. Hall

doi:10.1063/1.118693

Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, P. M. Fauchet, K. L. Moore, D. G. Hall

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Abstract

Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ≃ 1.5 μm is intense and narrow (≤15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er³⁺ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ≃ 1.5 μm was demonstrated.

Original language	English (US)
Pages (from-to)	1790-1792
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	14
DOIs	https://doi.org/10.1063/1.118693
State	Published - Apr 7 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.118693

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title = "Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide",

abstract = "Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ≃ 1.5 μm is intense and narrow (≤15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ≃ 1.5 μm was demonstrated.",

author = "L. Tsybeskov and Duttagupta, {S. P.} and Hirschman, {K. D.} and Fauchet, {P. M.} and Moore, {K. L.} and Hall, {D. G.}",

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TY - JOUR

T1 - Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

AU - Tsybeskov, L.

AU - Duttagupta, S. P.

AU - Hirschman, K. D.

AU - Fauchet, P. M.

AU - Moore, K. L.

AU - Hall, D. G.

PY - 1997/4/7

Y1 - 1997/4/7

N2 - Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ≃ 1.5 μm is intense and narrow (≤15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ≃ 1.5 μm was demonstrated.

AB - Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ≃ 1.5 μm is intense and narrow (≤15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ≃ 1.5 μm was demonstrated.

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Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

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