Roughening kinetics of chemical vapor deposited copper films on Si(100)

L. Vázquez, J. M. Albella, R. C. Salvarezza, A. J. Arvia, R. A. Levy, D. Perese

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of α is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.

Original languageEnglish (US)
Pages (from-to)1285-1287
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number9
DOIs
StatePublished - 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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