Roughening kinetics of chemical vapor deposited copper films on Si(100)

L. Vázquez; J. M. Albella; R. C. Salvarezza; A. J. Arvia; R. A. Levy; D. Perese

doi:10.1063/1.115954

Roughening kinetics of chemical vapor deposited copper films on Si(100)

L. Vázquez, J. M. Albella, R. C. Salvarezza, A. J. Arvia, R. A. Levy, D. Perese

Physics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of α is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.

Original language	English (US)
Pages (from-to)	1285-1287
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	9
DOIs	https://doi.org/10.1063/1.115954
State	Published - 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.115954

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title = "Roughening kinetics of chemical vapor deposited copper films on Si(100)",

abstract = "The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of α is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.",

author = "L. V{\'a}zquez and Albella, {J. M.} and Salvarezza, {R. C.} and Arvia, {A. J.} and Levy, {R. A.} and D. Perese",

year = "1996",

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T1 - Roughening kinetics of chemical vapor deposited copper films on Si(100)

AU - Vázquez, L.

AU - Albella, J. M.

AU - Salvarezza, R. C.

AU - Arvia, A. J.

AU - Levy, R. A.

AU - Perese, D.

PY - 1996

Y1 - 1996

N2 - The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of α is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.

AB - The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of α is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Roughening kinetics of chemical vapor deposited copper films on Si(100)

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