RRAM Devices with Plasma Treated HfO2with Ru as Top Electrode for In-Memory Computing Hardware

Yuvraj Patel, Durga Misra, Dina H. Triyoso, Kandabara Tapily, Robert D. Clark, Steven Consiglio, Gyana Pattanaik, Christopher Cole, Angelique Raley, Cory S. Wajda, Gert J. Leusink

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


This work investigates the role of extra oxygen vacancies, introduced by a hydrogen plasma at midpoint of deposition of a 6 nm thick HfO2 to reduce the switching power consumption in a RRAM device. Initially TiN, which is a commonly used metal in CMOS technology, was used as the top electrode for treated HfO2. Subsequently Ru and TaN as top electrodes were explored enhance the switching behavior and power consumption. A range of compliance currents from 1 nA to 1 mA were used to evaluate the switching characteristics. The role of both TaN and Ru as bottom metal was also evaluated. With Ru as top metal the device switched at a compliance current of 1 nA and higher. Whereas when Ru was used as bottom electrode, devices were unable to switch below a compliance current of 50 mA. For TaN as top metal electrode, devices switched at and above 1 mA CC whereas with TaN as bottom metal the initial switching was at CC of 2 mA. It was observed that use of Ru as a top metal significantly reduced the switching energy of the plasma treated HfO2 RRAM device but was ineffective when used as a bottom metal.

Original languageEnglish (US)
Title of host publication240th ECS Meeting - Semiconductors, Dielectrics, and Metals for Nanoelectronics 18
PublisherIOP Publishing Ltd.
Number of pages10
ISBN (Electronic)9781607685395
StatePublished - 2021
Event240th ECS Meeting - Orlando, United States
Duration: Oct 10 2021Oct 14 2021

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


Conference240th ECS Meeting
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • General Engineering


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