Keyphrases
Low Power
100%
CMOS Technology
100%
Boron
100%
Sub-micron Structure
100%
Threshold Voltage Shift
100%
Dual Gate
100%
Cross-diffusion
100%
Low Power CMOS
100%
Low Temperature
50%
Arsenic
50%
Dopant
50%
Processing Difficulty
50%
Atomic Diffusion
50%
A-Si
50%
Recrystallization
50%
Gate Stack
50%
Gate Oxide
50%
Rapid Thermal Annealing
50%
Gate Structure
50%
Poly-Si
50%
CMOS Devices
50%
Processing Stages
50%
Device Characteristics
50%
Deep Submicron Technology
50%
Poly Gate
50%
Through the Gate
50%
NMOS Device
50%
Co-implant
50%
Dual-gate Structure
50%
Low-voltage Application
50%
Engineering
Rapid Thermal Annealing
100%
Implant
25%
Low-Temperature
25%
Dopants
25%
Atomic Diffusion
25%
Gate Oxide
25%
Gate Stack
25%
Processing Step
25%
Arsenic
25%
Material Science
Boron
100%
Oxide Compound
50%
Doping (Additives)
50%
Arsenic
50%