SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons

R. C. Farrow; M. Mkrtchyan; I. C. Kizilyalli; W. K. Waskiewicz; L. C. Hopkins; A. Alakan; G. Gibson; P. Brown; S. Misra; L. Trimble

doi:10.1116/1.1401749

SCALPEL mark detection using Si/SiO₂ and 100 keV backscattered electrons

R. C. Farrow, M. Mkrtchyan, I. C. Kizilyalli, W. K. Waskiewicz, L. C. Hopkins, A. Alakan, G. Gibson, P. Brown, S. Misra, L. Trimble

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The scattering with angular limitation in projection electron-beam lithography (SCALPEL) mark detection using Si/SiO₂ and 100 keV backscattered electrons was discussed. The signal to noise from the Si/SiO₂ marks were comparable to that measured from Si/WSi₂ marks fabricated in complementary metal oxide semiconductor (CMOS) gate material. The mark process allowed for the integration of SCALPEL for gate level lithography by aligning to thin oxides (TOX) with minimal modification to the shallow trench isolation (STI) process.

Original language	English (US)
Pages (from-to)	1852-1856
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	5
DOIs	https://doi.org/10.1116/1.1401749
State	Published - Sep 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1401749

Cite this

@article{aa5f0b3e98a04e60aec36d11b44e9b59,

title = "SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons",

abstract = "The scattering with angular limitation in projection electron-beam lithography (SCALPEL) mark detection using Si/SiO2 and 100 keV backscattered electrons was discussed. The signal to noise from the Si/SiO2 marks were comparable to that measured from Si/WSi2 marks fabricated in complementary metal oxide semiconductor (CMOS) gate material. The mark process allowed for the integration of SCALPEL for gate level lithography by aligning to thin oxides (TOX) with minimal modification to the shallow trench isolation (STI) process.",

author = "Farrow, {R. C.} and M. Mkrtchyan and Kizilyalli, {I. C.} and Waskiewicz, {W. K.} and Hopkins, {L. C.} and A. Alakan and G. Gibson and P. Brown and S. Misra and L. Trimble",

year = "2001",

month = sep,

doi = "10.1116/1.1401749",

language = "English (US)",

volume = "19",

pages = "1852--1856",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons

AU - Farrow, R. C.

AU - Mkrtchyan, M.

AU - Kizilyalli, I. C.

AU - Waskiewicz, W. K.

AU - Hopkins, L. C.

AU - Alakan, A.

AU - Gibson, G.

AU - Brown, P.

AU - Misra, S.

AU - Trimble, L.

PY - 2001/9

Y1 - 2001/9

N2 - The scattering with angular limitation in projection electron-beam lithography (SCALPEL) mark detection using Si/SiO2 and 100 keV backscattered electrons was discussed. The signal to noise from the Si/SiO2 marks were comparable to that measured from Si/WSi2 marks fabricated in complementary metal oxide semiconductor (CMOS) gate material. The mark process allowed for the integration of SCALPEL for gate level lithography by aligning to thin oxides (TOX) with minimal modification to the shallow trench isolation (STI) process.

AB - The scattering with angular limitation in projection electron-beam lithography (SCALPEL) mark detection using Si/SiO2 and 100 keV backscattered electrons was discussed. The signal to noise from the Si/SiO2 marks were comparable to that measured from Si/WSi2 marks fabricated in complementary metal oxide semiconductor (CMOS) gate material. The mark process allowed for the integration of SCALPEL for gate level lithography by aligning to thin oxides (TOX) with minimal modification to the shallow trench isolation (STI) process.

UR - http://www.scopus.com/inward/record.url?scp=0035440549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035440549&partnerID=8YFLogxK

U2 - 10.1116/1.1401749

DO - 10.1116/1.1401749

M3 - Article

AN - SCOPUS:0035440549

SN - 1071-1023

VL - 19

SP - 1852

EP - 1856

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

SCALPEL mark detection using Si/SiO₂ and 100 keV backscattered electrons

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this