SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons

R. C. Farrow, M. Mkrtchyan, I. C. Kizilyalli, W. K. Waskiewicz, L. C. Hopkins, A. Alakan, G. Gibson, P. Brown, S. Misra, L. Trimble

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The scattering with angular limitation in projection electron-beam lithography (SCALPEL) mark detection using Si/SiO2 and 100 keV backscattered electrons was discussed. The signal to noise from the Si/SiO2 marks were comparable to that measured from Si/WSi2 marks fabricated in complementary metal oxide semiconductor (CMOS) gate material. The mark process allowed for the integration of SCALPEL for gate level lithography by aligning to thin oxides (TOX) with minimal modification to the shallow trench isolation (STI) process.

Original languageEnglish (US)
Pages (from-to)1852-1856
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number5
DOIs
StatePublished - Sep 1 2001

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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