Schottky barrier diodes for solar energy conversion

W. A. Anderson; A. E. Delahoy

doi:10.1109/PROC.1972.8934

Schottky barrier diodes for solar energy conversion

W. A. Anderson, A. E. Delahoy

Physics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Several Schottky barrier solar cells were fabricated by evaporation and sputtering of A1 ohmic contacts and Cr or AuCr alloy barrier metals on 0.5-10.0 a-cm p-type silicon. Potential efficiencies of 4.8 to 12 percent were observed which would be realized with improved fill factors. Computer studies of the optical problem indicate an output power increase by a factor of four through the use of reduced barrier metal thickness (from 275 to 100 A) and alloy barrier metals to more effectively transmit solar energy to the Schottky junction.

Original language	English (US)
Pages (from-to)	1457-1458
Number of pages	2
Journal	Proceedings of the IEEE
Volume	60
Issue number	11
DOIs	https://doi.org/10.1109/PROC.1972.8934
State	Published - Nov 1972

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/PROC.1972.8934

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AB - Several Schottky barrier solar cells were fabricated by evaporation and sputtering of A1 ohmic contacts and Cr or AuCr alloy barrier metals on 0.5-10.0 a-cm p-type silicon. Potential efficiencies of 4.8 to 12 percent were observed which would be realized with improved fill factors. Computer studies of the optical problem indicate an output power increase by a factor of four through the use of reduced barrier metal thickness (from 275 to 100 A) and alloy barrier metals to more effectively transmit solar energy to the Schottky junction.

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Schottky barrier diodes for solar energy conversion

Abstract

All Science Journal Classification (ASJC) codes

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