Schottky barrier diodes for solar energy conversion

W. A. Anderson, A. E. Delahoy

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Several Schottky barrier solar cells were fabricated by evaporation and sputtering of A1 ohmic contacts and Cr or AuCr alloy barrier metals on 0.5-10.0 a-cm p-type silicon. Potential efficiencies of 4.8 to 12 percent were observed which would be realized with improved fill factors. Computer studies of the optical problem indicate an output power increase by a factor of four through the use of reduced barrier metal thickness (from 275 to 100 A) and alloy barrier metals to more effectively transmit solar energy to the Schottky junction.

Original languageEnglish (US)
Pages (from-to)1457-1458
Number of pages2
JournalProceedings of the IEEE
Issue number11
StatePublished - Nov 1972
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Computer Science
  • Electrical and Electronic Engineering


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