Screening of Si-H bonds during plasma processing

Keyphrases

• Plasma Processing 100%
• Si-H Bonds 100%
• Effective Screening 75%
• Gate Injection 50%
• Interface State Density 50%
• Screened Potential 50%
• Antenna 25%
• Transistor 25%
• Stress-induced 25%
• High Field 25%
• Charge Plasma 25%
• Charging Damage 25%
• Si-SiO2 Interface 25%
• Reverse-biased 25%
• Antenna Ratio 25%
• High-field Injection 25%
• Electron Injection 25%
• CMOS Devices 25%
• N-channel MOSFET 25%
• Hot Carrier Stress 25%
• Current Stress 25%
• First-order Kinetic Equation 25%
• H Concentration 25%

Engineering

• Plasma Applications 100%
• Antenna 66%
• Interface State 66%
• Induced Stress 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Electron Injection 33%
• Kinetic Equation 33%

Material Science

• Density 100%
• Transistor 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Hot Carrier 50%
• Kinetic Order 50%