Selective Area Growth of Ga- and N-Polar InGaN/GaN Nanowires - A Comparative Study

Arnob Ghosh, Kamruzzaman Khan, Shrivatch Sankar, Elaheh Ahmadi, Shamsul Arafin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaN quantum disks in GaN nanowires are grown on both Ga- and N-polar GaN templates. Comparative analysis indicates superior geometric control in N-polar GaN with higher vertical, reduced lateral growth rates, flat tops, and increased indium-incorporation compared to Ga-polar.

Original languageEnglish (US)
Title of host publication2024 Conference on Lasers and Electro-Optics, CLEO 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781957171395
DOIs
StatePublished - 2024
Externally publishedYes
Event2024 Conference on Lasers and Electro-Optics, CLEO 2024 - Charlotte, United States
Duration: May 7 2024May 10 2024

Publication series

Name2024 Conference on Lasers and Electro-Optics, CLEO 2024

Conference

Conference2024 Conference on Lasers and Electro-Optics, CLEO 2024
Country/TerritoryUnited States
CityCharlotte
Period5/7/245/10/24

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Computer Networks and Communications
  • Civil and Structural Engineering
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Keywords

  • Electro-optical waveguides
  • Lasers and electrooptics
  • Nanowires

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