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Selective Electroless Plated Ni Contacts to CMOS Junctions with CoSi
2
G. E. Georgiou
, P. F. Bechtold
, H. Luftman
, T. T. Sheng
Research output
:
Contribution to journal
›
Article
›
peer-review
4
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Scopus citations
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Dive into the research topics of 'Selective Electroless Plated Ni Contacts to CMOS Junctions with CoSi
2
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Keyphrases
Metal Oxide
100%
CoSi2
100%
Electroless
100%
Silicon Junction
100%
Al-Ni
83%
Diode
33%
Metallization
33%
Physical Analysis
33%
Deep Junction
33%
NiSi
33%
High Aspect Ratio
16%
Electrical Properties
16%
Silicon Processing
16%
Material Interaction
16%
Annealing
16%
Contact Resistance
16%
Annealing Temperature
16%
Silicon Devices
16%
Transmission Electron Microscopy
16%
Microscopy Electron
16%
Auger Electron Spectroscopy
16%
Processing Temperature
16%
Nickel Alloys
16%
Electroless Plating
16%
Electroless Ni-P
16%
Al3Ni
16%
Ni Metallization
16%
Al-Si
16%
Ni2Si
16%
Ultra-shallow Junction
16%
Reverse Bias
16%
Engineering
Metallizations
100%
Silicon Oxide
100%
High Aspect Ratio
33%
Alloy
33%
Silicon Device
33%
Reverse Bias
33%
Plating Process
33%
Material Interaction
33%
Cross-Section Analysis
33%
Electroless Plating
33%
Aluminum
33%
Material Science
Silicon
100%
Metal Oxide
100%
Transmission Electron Microscopy
33%
Aluminum
33%
Contact Resistance
33%
Electroless Deposition
33%
Auger Electron Spectroscopy
33%
Electrical Property
33%
Silicon Device
33%
Nickel Alloy
33%