Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy

W. H. Goh, J. Martin, S. Ould-Saad, S. Gautier, A. A. Sirenko, A. Martinez, L. Le Gratiet, A. Ramdane, N. Maloufi, A. Ougazzaden

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

GaN nanodots and nanostripes with smooth sidewall surfaces have been selectively grown on 6H-SiC substrates by metal organic vapor phase epitaxy. By varying the growth reactor pressure, we have been able to grow either isolated nanostructures or laterally overgrown structures. As confirmed by the Raman scattering and X-ray diffraction techniques, the nanostructures have no influence of step bunching that occurs in the unmasked area of the continuous GaN film. The frequency shift of the E2 optical phonons shows that the residual strain in the nanostripes is relaxed compared to the continuous GaN film.

Original languageEnglish (US)
Pages (from-to)S510-S513
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue numberSUPPL. 2
DOIs
StatePublished - Jul 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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