Selective LPCVD Tungsten for Contact Barrier Applications

R. A. Levy, M. L. Green, P. K. Gallagher, Y. S. Ali

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

This study assesses the use of selective LPCVD tungsten as a contact barrier in VLSI circuits. Measurements of the contact resistance and leakage current are evaluated as a function of variations in W deposition parameters, implant type, implant dosage, and metallization heat-treatment. Addition of SiF4 to alter the equilibrium of the displacement reaction is seen to cause minimal erosion and encroachment of the Si contacts as well as produce low and thermally stable contact resistances to both n+ and p+ diffusions. For surface doping concentrations of 1.44 1020 cm-3 As and 0.62 1020 cm-3 B, measured values of the contact resistance for 2.0 μm sized vias are near 3011. Such values are quite compatible with high performance CMOS device requirements. Further reductions in these values are achieved with use of a self-aligned PtSi/W contact barrier metallization. The contact resistance for 2.0 μm sized vias are, in this case, near 4 and 1511 for the n+ and p+ diffusions, respectively. Sporadic leakage across shallow n+/P-Tub junctions remains, however, a serious problem associated with this selective LPCVD W process. Understanding the origin of this leakage and eliminating it can lead to numerous applications of this technology in VLSI manufacturing.

Original languageEnglish (US)
Pages (from-to)1905-1912
Number of pages8
JournalJournal of the Electrochemical Society
Volume133
Issue number9
DOIs
StatePublished - Sep 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Selective LPCVD Tungsten for Contact Barrier Applications'. Together they form a unique fingerprint.

Cite this