Selective Silicide or Boride Film Formation by Reaction of Vapor Phase TiCl4 with Silicon or Boron

F. Schrey, Roland Levy, P. K. Gallagher

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Methods for selectively forming titanium silicide and titanium boride by vapor phase reaction of titanium chloride precursors with silicon or boron substrate surfaces are examined. By passing TiCl4 through a heated chamber packed with titanium metal turnings within the reactor tube, a reduced titanium halide is generated. It was found that the silicide or boride formation in the reactor can thus be controlled at a much lower temperature. Also, excessive silicon erosion normally encountered at the higher operating temperature (>775°C) required for the direct TiCl4 reaction is minimized. Characterization of the resulting films was conducted by use of scanning and transmission electron microscopy, sheet resistance measurements, and x-ray diffraction.

Original languageEnglish (US)
Pages (from-to)1647-1649
Number of pages3
JournalJournal of the Electrochemical Society
Issue number5
StatePublished - Jan 1 1990
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


Dive into the research topics of 'Selective Silicide or Boride Film Formation by Reaction of Vapor Phase TiCl<sub>4</sub> with Silicon or Boron'. Together they form a unique fingerprint.

Cite this