Methods for selectively forming titanium silicide and titanium boride by vapor phase reaction of titanium chloride precursors with silicon or boron substrate surfaces are examined. By passing TiCl4 through a heated chamber packed with titanium metal turnings within the reactor tube, a reduced titanium halide is generated. It was found that the silicide or boride formation in the reactor can thus be controlled at a much lower temperature. Also, excessive silicon erosion normally encountered at the higher operating temperature (>775°C) required for the direct TiCl4 reaction is minimized. Characterization of the resulting films was conducted by use of scanning and transmission electron microscopy, sheet resistance measurements, and x-ray diffraction.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry