Self-heating assessment on bulk FinFET devices through characterization and predictive simulation

Peter Paliwoda, Prashanth P. Manik, Dhruv Singh, Zakariae Chbili, Andreas Kerber, Jeffrey Johnson, Durgamadhab Misra

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

Original languageEnglish (US)
Pages (from-to)133-138
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Volume18
Issue number2
DOIs
StatePublished - Jun 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Keywords

  • Heat sensor
  • TCAD
  • joule heating
  • reliability
  • self-heating

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