Self-heating assessment on bulk FinFET devices through characterization and predictive simulation

Peter Paliwoda; Prashanth P. Manik; Dhruv Singh; Zakariae Chbili; Andreas Kerber; Jeffrey Johnson; Durgamadhab Misra

doi:10.1109/TDMR.2018.2818930

Self-heating assessment on bulk FinFET devices through characterization and predictive simulation

Peter Paliwoda, Prashanth P. Manik, Dhruv Singh, Zakariae Chbili, Andreas Kerber, Jeffrey Johnson, Durgamadhab Misra

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (V_T) of an adjacent FET, the forward bias (V_D) of an adjacent pn-junction or the gate resistance (R_G) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

Original language	English (US)
Pages (from-to)	133-138
Number of pages	6
Journal	IEEE Transactions on Device and Materials Reliability
Volume	18
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2018.2818930
State	Published - Jun 2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Keywords

Heat sensor
TCAD
joule heating
reliability
self-heating

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10.1109/TDMR.2018.2818930

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title = "Self-heating assessment on bulk FinFET devices through characterization and predictive simulation",

abstract = "This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.",

keywords = "Heat sensor, TCAD, joule heating, reliability, self-heating",

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AU - Paliwoda, Peter

AU - Manik, Prashanth P.

AU - Singh, Dhruv

AU - Chbili, Zakariae

AU - Kerber, Andreas

AU - Johnson, Jeffrey

AU - Misra, Durgamadhab

PY - 2018/6

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AB - This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

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KW - TCAD

KW - joule heating

KW - reliability

KW - self-heating

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Self-heating assessment on bulk FinFET devices through characterization and predictive simulation

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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