Self-heating effects on hot carrier degradation and its impact on logic circuit reliability

Peter Paliwoda; Zakariae Chbili; Andreas Kerber; Tanya Nigam; K. Nagahiro; Salvatore Cimino; Maria Toledano-Luque; Luigi Pantisano; Byoung Woon Min; Durgamadhab Misra

doi:10.1109/TDMR.2019.2916230

Self-heating effects on hot carrier degradation and its impact on logic circuit reliability

Peter Paliwoda, Zakariae Chbili, Andreas Kerber, Tanya Nigam, K. Nagahiro, Salvatore Cimino, Maria Toledano-Luque, Luigi Pantisano, Byoung Woon Min, Durgamadhab Misra

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

Original language	English (US)
Article number	8712418
Pages (from-to)	249-254
Number of pages	6
Journal	IEEE Transactions on Device and Materials Reliability
Volume	19
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2019.2916230
State	Published - Jun 2019

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Keywords

Self-heating
heat sensor
hot carrier injection
reliability
ring oscillator

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10.1109/TDMR.2019.2916230

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title = "Self-heating effects on hot carrier degradation and its impact on logic circuit reliability",

abstract = "This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.",

keywords = "Self-heating, heat sensor, hot carrier injection, reliability, ring oscillator",

author = "Peter Paliwoda and Zakariae Chbili and Andreas Kerber and Tanya Nigam and K. Nagahiro and Salvatore Cimino and Maria Toledano-Luque and Luigi Pantisano and Min, {Byoung Woon} and Durgamadhab Misra",

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AU - Paliwoda, Peter

AU - Chbili, Zakariae

AU - Kerber, Andreas

AU - Nigam, Tanya

AU - Nagahiro, K.

AU - Cimino, Salvatore

AU - Toledano-Luque, Maria

AU - Pantisano, Luigi

AU - Min, Byoung Woon

AU - Misra, Durgamadhab

PY - 2019/6

Y1 - 2019/6

N2 - This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

AB - This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

KW - Self-heating

KW - heat sensor

KW - hot carrier injection

KW - reliability

KW - ring oscillator

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ER -

Self-heating effects on hot carrier degradation and its impact on logic circuit reliability

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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