Self-heating effects on hot carrier degradation and its impact on logic circuit reliability

Peter Paliwoda, Zakariae Chbili, Andreas Kerber, Tanya Nigam, K. Nagahiro, Salvatore Cimino, Maria Toledano-Luque, Luigi Pantisano, Byoung Woon Min, Durgamadhab Misra

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

Original languageEnglish (US)
Article number8712418
Pages (from-to)249-254
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Issue number2
StatePublished - Jun 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering


  • Self-heating
  • heat sensor
  • hot carrier injection
  • reliability
  • ring oscillator


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