@article{aa6420525ba04934a7a41fc675e49db7,
title = "Self-heating effects on hot carrier degradation and its impact on logic circuit reliability",
abstract = "This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.",
keywords = "Self-heating, heat sensor, hot carrier injection, reliability, ring oscillator",
author = "Peter Paliwoda and Zakariae Chbili and Andreas Kerber and Tanya Nigam and K. Nagahiro and Salvatore Cimino and Maria Toledano-Luque and Luigi Pantisano and Min, {Byoung Woon} and Durgamadhab Misra",
note = "Funding Information: Manuscript received March 1, 2019; revised April 2, 2019; accepted April 19, 2019. Date of publication May 10, 2019; date of current version June 5, 2019. This work was supported in part by GLOBALFOUNDRIES INC., and in part by the New Jersey Institute of Technology. (Corresponding author: Peter Paliwoda.) P. Paliwoda, T. Nigam, K. Nagahiro, S. Cimino, M. Toledano-Luque, L. Pantisano, and B. W. Min are with Quality Reliability Assurance, GLOBALFOUNDRIES Inc., Malta, NY 12020 USA (e-mail: peter.paliwoda@globalfoundries.com; tanya.nigam@globalfoundries.com; kurt.nagahiro@globalfoundries.com; salvatore.cimino@globalfoundries.com; maria.toledanoluque@globalfoundries.com; luigi.pantisano@ globalfoundries.com; byoung.min@globalfoundries.com). Publisher Copyright: {\textcopyright} 2001-2011 IEEE.",
year = "2019",
month = jun,
doi = "10.1109/TDMR.2019.2916230",
language = "English (US)",
volume = "19",
pages = "249--254",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}