Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability

P. Paliwoda; Z. Chbili; A. Kerber; T. Nigam; D. Singh; K. Nagahiro; P. P. Manik; S. Cimino; D. Misra

doi:10.1109/IIRW.2018.8727093

Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability

P. Paliwoda, Z. Chbili, A. Kerber, T. Nigam, D. Singh, K. Nagahiro, P. P. Manik, S. Cimino, D. Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

Original language	English (US)
Title of host publication	2018 IEEE International Integrated Reliability Workshop, IIRW 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538660393
DOIs	https://doi.org/10.1109/IIRW.2018.8727093
State	Published - Oct 2018
Event	2018 IEEE International Integrated Reliability Workshop, IIRW 2018 - South Lake Tahoe, United States Duration: Oct 7 2018 → Oct 11 2018

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
Volume	2018-October
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	2018 IEEE International Integrated Reliability Workshop, IIRW 2018
Country/Territory	United States
City	South Lake Tahoe
Period	10/7/18 → 10/11/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Keywords

Heat sensor
Hot carrier injection
Reliability
Ring oscillator
Self-heating

Access to Document

10.1109/IIRW.2018.8727093

Cite this

Paliwoda, P., Chbili, Z., Kerber, A., Nigam, T., Singh, D., Nagahiro, K., Manik, P. P., Cimino, S., & Misra, D. (2018). Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability. In 2018 IEEE International Integrated Reliability Workshop, IIRW 2018 Article 8727093 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2018-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2018.8727093

@inproceedings{22b0b7648c094a869d58a9eea5b39ca8,

title = "Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability",

abstract = "This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.",

keywords = "Heat sensor, Hot carrier injection, Reliability, Ring oscillator, Self-heating",

author = "P. Paliwoda and Z. Chbili and A. Kerber and T. Nigam and D. Singh and K. Nagahiro and Manik, {P. P.} and S. Cimino and D. Misra",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Integrated Reliability Workshop, IIRW 2018 ; Conference date: 07-10-2018 Through 11-10-2018",

year = "2018",

month = oct,

doi = "10.1109/IIRW.2018.8727093",

language = "English (US)",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 IEEE International Integrated Reliability Workshop, IIRW 2018",

address = "United States",

}

Paliwoda, P, Chbili, Z, Kerber, A, Nigam, T, Singh, D, Nagahiro, K, Manik, PP, Cimino, S & Misra, D 2018, Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability. in 2018 IEEE International Integrated Reliability Workshop, IIRW 2018., 8727093, IEEE International Integrated Reliability Workshop Final Report, vol. 2018-October, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE International Integrated Reliability Workshop, IIRW 2018, South Lake Tahoe, United States, 10/7/18. https://doi.org/10.1109/IIRW.2018.8727093

Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability. / Paliwoda, P.; Chbili, Z.; Kerber, A. et al.
2018 IEEE International Integrated Reliability Workshop, IIRW 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8727093 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2018-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability

AU - Paliwoda, P.

AU - Chbili, Z.

AU - Kerber, A.

AU - Nigam, T.

AU - Singh, D.

AU - Nagahiro, K.

AU - Manik, P. P.

AU - Cimino, S.

AU - Misra, D.

PY - 2018/10

Y1 - 2018/10

N2 - This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

AB - This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

KW - Heat sensor

KW - Hot carrier injection

KW - Reliability

KW - Ring oscillator

KW - Self-heating

UR - http://www.scopus.com/inward/record.url?scp=85067595318&partnerID=8YFLogxK

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DO - 10.1109/IIRW.2018.8727093

M3 - Conference contribution

AN - SCOPUS:85067595318

T3 - IEEE International Integrated Reliability Workshop Final Report

BT - 2018 IEEE International Integrated Reliability Workshop, IIRW 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE International Integrated Reliability Workshop, IIRW 2018

Y2 - 7 October 2018 through 11 October 2018

ER -

Paliwoda P, Chbili Z, Kerber A, Nigam T, Singh D, Nagahiro K et al. Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability. In 2018 IEEE International Integrated Reliability Workshop, IIRW 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8727093. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IIRW.2018.8727093

Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability

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All Science Journal Classification (ASJC) codes

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