Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability

P. Paliwoda, Z. Chbili, A. Kerber, T. Nigam, D. Singh, K. Nagahiro, P. P. Manik, S. Cimino, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

Original languageEnglish (US)
Title of host publication2018 IEEE International Integrated Reliability Workshop, IIRW 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538660393
DOIs
StatePublished - Oct 2018
Event2018 IEEE International Integrated Reliability Workshop, IIRW 2018 - South Lake Tahoe, United States
Duration: Oct 7 2018Oct 11 2018

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2018-October

Conference

Conference2018 IEEE International Integrated Reliability Workshop, IIRW 2018
CountryUnited States
CitySouth Lake Tahoe
Period10/7/1810/11/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Keywords

  • Heat sensor
  • Hot carrier injection
  • Reliability
  • Ring oscillator
  • Self-heating

Fingerprint Dive into the research topics of 'Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability'. Together they form a unique fingerprint.

Cite this