Self-heating measurement methodologies and their assessment on bulk FinFET devices

P. Paliwoda, Z. Chbili, A. Kerber, A. Gondal, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

Original languageEnglish (US)
Title of host publication2017 IEEE International Integrated Reliability Workshop, IIRW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538623329
DOIs
StatePublished - May 18 2018
Event2017 IEEE International Integrated Reliability Workshop, IIRW 2017 - South Lake Tahoe, United States
Duration: Oct 8 2017Oct 12 2017

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2017-October

Other

Other2017 IEEE International Integrated Reliability Workshop, IIRW 2017
Country/TerritoryUnited States
CitySouth Lake Tahoe
Period10/8/1710/12/17

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Keywords

  • heat sensor
  • reliability
  • self-heating

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