Self-heating measurement methodologies and their assessment on bulk FinFET devices

P. Paliwoda; Z. Chbili; A. Kerber; A. Gondal; D. Misra

doi:10.1109/IIRW.2017.8361226

Self-heating measurement methodologies and their assessment on bulk FinFET devices

P. Paliwoda, Z. Chbili, A. Kerber, A. Gondal, D. Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (V_T) of an adjacent FET, the forward bias (V_D) of an adjacent pn-junction or the gate resistance (R_G) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

Original language	English (US)
Title of host publication	2017 IEEE International Integrated Reliability Workshop, IIRW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538623329
DOIs	https://doi.org/10.1109/IIRW.2017.8361226
State	Published - Jul 2 2017
Event	2017 IEEE International Integrated Reliability Workshop, IIRW 2017 - South Lake Tahoe, United States Duration: Oct 8 2017 → Oct 12 2017

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
Volume	2017-October
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Other

Other	2017 IEEE International Integrated Reliability Workshop, IIRW 2017
Country/Territory	United States
City	South Lake Tahoe
Period	10/8/17 → 10/12/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Keywords

heat sensor
reliability
self-heating

Access to Document

10.1109/IIRW.2017.8361226

Cite this

Paliwoda, P., Chbili, Z., Kerber, A., Gondal, A., & Misra, D. (2017). Self-heating measurement methodologies and their assessment on bulk FinFET devices. In 2017 IEEE International Integrated Reliability Workshop, IIRW 2017 (pp. 1-4). (IEEE International Integrated Reliability Workshop Final Report; Vol. 2017-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2017.8361226

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title = "Self-heating measurement methodologies and their assessment on bulk FinFET devices",

abstract = "This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.",

keywords = "heat sensor, reliability, self-heating",

author = "P. Paliwoda and Z. Chbili and A. Kerber and A. Gondal and D. Misra",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Integrated Reliability Workshop, IIRW 2017 ; Conference date: 08-10-2017 Through 12-10-2017",

year = "2017",

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doi = "10.1109/IIRW.2017.8361226",

language = "English (US)",

series = "IEEE International Integrated Reliability Workshop Final Report",

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Paliwoda, P, Chbili, Z, Kerber, A, Gondal, A & Misra, D 2017, Self-heating measurement methodologies and their assessment on bulk FinFET devices. in 2017 IEEE International Integrated Reliability Workshop, IIRW 2017. IEEE International Integrated Reliability Workshop Final Report, vol. 2017-October, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 2017 IEEE International Integrated Reliability Workshop, IIRW 2017, South Lake Tahoe, United States, 10/8/17. https://doi.org/10.1109/IIRW.2017.8361226

Self-heating measurement methodologies and their assessment on bulk FinFET devices. / Paliwoda, P.; Chbili, Z.; Kerber, A. et al.
2017 IEEE International Integrated Reliability Workshop, IIRW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Self-heating measurement methodologies and their assessment on bulk FinFET devices

AU - Paliwoda, P.

AU - Chbili, Z.

AU - Kerber, A.

AU - Gondal, A.

AU - Misra, D.

PY - 2017/7/2

Y1 - 2017/7/2

N2 - This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

AB - This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.

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KW - self-heating

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M3 - Conference contribution

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T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 1

EP - 4

BT - 2017 IEEE International Integrated Reliability Workshop, IIRW 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 IEEE International Integrated Reliability Workshop, IIRW 2017

Y2 - 8 October 2017 through 12 October 2017

ER -

Paliwoda P, Chbili Z, Kerber A, Gondal A, Misra D. Self-heating measurement methodologies and their assessment on bulk FinFET devices. In 2017 IEEE International Integrated Reliability Workshop, IIRW 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IIRW.2017.8361226

Self-heating measurement methodologies and their assessment on bulk FinFET devices

Abstract

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All Science Journal Classification (ASJC) codes

Keywords

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