Self-organization and ordering in nanocrystalline Si/SiO2 superlattices

D. J. Lockwood; G. F. Grom; L. Tsybeskov; P. M. Fauchet; H. J. Labbé; J. P. McCaffrey; B. White

doi:10.1016/S1386-9477(01)00183-7

Self-organization and ordering in nanocrystalline Si/SiO₂ superlattices

D. J. Lockwood, G. F. Grom, L. Tsybeskov, P. M. Fauchet, H. J. Labbé, J. P. McCaffrey, B. White

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The solid phase crystallization of nanometer-thick layers of disordered Si confined between layers of amorphous SiO₂ has been achieved using high temperature annealing. For ultrathin Si layers (∼1-3 nm thick) crystallization was not possible even after extensive annealing at temperatures up to 1100°C, because of the high strain fields introduced by the SiO₂ layers. However, for thicker layers (∼4-20 nm thick) a variety of Si nanocrystals ranging in shape from spheres to bricks could be spontaneously formed and, in suitable cases, oriented along the 〈111〉 crystallographic direction. This formation of organized nanocrystals is an important step towards the construction of Si/SiO₂ quantum devices.

Original language	English (US)
Pages (from-to)	99-103
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	11
Issue number	2-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00183-7
State	Published - Oct 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Crystallization
Nanocrystals
Silicon
Silicon dioxide
Superlattice

Access to Document

10.1016/S1386-9477(01)00183-7

Cite this

@article{81d9a8c7f0824d82ae2764723a9230e1,

title = "Self-organization and ordering in nanocrystalline Si/SiO2 superlattices",

abstract = "The solid phase crystallization of nanometer-thick layers of disordered Si confined between layers of amorphous SiO2 has been achieved using high temperature annealing. For ultrathin Si layers (∼1-3 nm thick) crystallization was not possible even after extensive annealing at temperatures up to 1100°C, because of the high strain fields introduced by the SiO2 layers. However, for thicker layers (∼4-20 nm thick) a variety of Si nanocrystals ranging in shape from spheres to bricks could be spontaneously formed and, in suitable cases, oriented along the 〈111〉 crystallographic direction. This formation of organized nanocrystals is an important step towards the construction of Si/SiO2 quantum devices.",

keywords = "Crystallization, Nanocrystals, Silicon, Silicon dioxide, Superlattice",

author = "Lockwood, {D. J.} and Grom, {G. F.} and L. Tsybeskov and Fauchet, {P. M.} and Labb{\'e}, {H. J.} and McCaffrey, {J. P.} and B. White",

note = "Funding Information: We thank G.I. Sproule, J.-M. Baribeau, J. Diener, D. Kovalev, and F. Koch for their contributions to different aspects of this work, which was supported by the US Army Research Office, the National Science Foundation, and Motorola.",

year = "2001",

month = oct,

doi = "10.1016/S1386-9477(01)00183-7",

language = "English (US)",

volume = "11",

pages = "99--103",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Self-organization and ordering in nanocrystalline Si/SiO2 superlattices

AU - Lockwood, D. J.

AU - Grom, G. F.

AU - Tsybeskov, L.

AU - Fauchet, P. M.

AU - Labbé, H. J.

AU - McCaffrey, J. P.

AU - White, B.

N1 - Funding Information: We thank G.I. Sproule, J.-M. Baribeau, J. Diener, D. Kovalev, and F. Koch for their contributions to different aspects of this work, which was supported by the US Army Research Office, the National Science Foundation, and Motorola.

PY - 2001/10

Y1 - 2001/10

N2 - The solid phase crystallization of nanometer-thick layers of disordered Si confined between layers of amorphous SiO2 has been achieved using high temperature annealing. For ultrathin Si layers (∼1-3 nm thick) crystallization was not possible even after extensive annealing at temperatures up to 1100°C, because of the high strain fields introduced by the SiO2 layers. However, for thicker layers (∼4-20 nm thick) a variety of Si nanocrystals ranging in shape from spheres to bricks could be spontaneously formed and, in suitable cases, oriented along the 〈111〉 crystallographic direction. This formation of organized nanocrystals is an important step towards the construction of Si/SiO2 quantum devices.

AB - The solid phase crystallization of nanometer-thick layers of disordered Si confined between layers of amorphous SiO2 has been achieved using high temperature annealing. For ultrathin Si layers (∼1-3 nm thick) crystallization was not possible even after extensive annealing at temperatures up to 1100°C, because of the high strain fields introduced by the SiO2 layers. However, for thicker layers (∼4-20 nm thick) a variety of Si nanocrystals ranging in shape from spheres to bricks could be spontaneously formed and, in suitable cases, oriented along the 〈111〉 crystallographic direction. This formation of organized nanocrystals is an important step towards the construction of Si/SiO2 quantum devices.

KW - Crystallization

KW - Nanocrystals

KW - Silicon

KW - Silicon dioxide

KW - Superlattice

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U2 - 10.1016/S1386-9477(01)00183-7

DO - 10.1016/S1386-9477(01)00183-7

M3 - Article

AN - SCOPUS:0035475185

SN - 1386-9477

VL - 11

SP - 99

EP - 103

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-3

ER -