Semiconductor technologies for high speed optical networking

Y. K. Chen; Y. Baeyens; C. T. Liu; R. Kopf; R. Hamm; C. Chen; Y. Yang; J. Frackoviak; A. Tate; P. Paschke; J. Weiner; G. Georgiou; P. Roux; V. Houstma

doi:10.1109/IEDM.2001.979503

Semiconductor technologies for high speed optical networking

Y. K. Chen, Y. Baeyens, C. T. Liu, R. Kopf, R. Hamm, C. Chen, Y. Yang, J. Frackoviak, A. Tate, P. Paschke, J. Weiner, G. Georgiou, P. Roux, V. Houstma

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

For high speed TDM optical links, high speed physical layer electronics provides critical interface between the local electronic data traffic and high speed optoelectronic devices. We will examine the impact of several high speed compound semiconductor IC technologies such as SiGe, GaAs, and InP, on the performance of opto-electronic transceivers at data rate of 40 Gbps and 100+ Gbps regime. In this talk, we will utilize a 40 Gbps opto-electronics transceiver as an example to illustrate the advantages and limitations of these compound semiconductor IC technologies.

Original language	English (US)
Pages (from-to)	329-331
Number of pages	3
Journal	Technical Digest-International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979503
State	Published - 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1109/IEDM.2001.979503

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abstract = "For high speed TDM optical links, high speed physical layer electronics provides critical interface between the local electronic data traffic and high speed optoelectronic devices. We will examine the impact of several high speed compound semiconductor IC technologies such as SiGe, GaAs, and InP, on the performance of opto-electronic transceivers at data rate of 40 Gbps and 100+ Gbps regime. In this talk, we will utilize a 40 Gbps opto-electronics transceiver as an example to illustrate the advantages and limitations of these compound semiconductor IC technologies.",

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doi = "10.1109/IEDM.2001.979503",

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T1 - Semiconductor technologies for high speed optical networking

AU - Chen, Y. K.

AU - Baeyens, Y.

AU - Liu, C. T.

AU - Kopf, R.

AU - Hamm, R.

AU - Chen, C.

AU - Yang, Y.

AU - Frackoviak, J.

AU - Tate, A.

AU - Paschke, P.

AU - Weiner, J.

AU - Georgiou, G.

AU - Roux, P.

AU - Houstma, V.

PY - 2001

Y1 - 2001

N2 - For high speed TDM optical links, high speed physical layer electronics provides critical interface between the local electronic data traffic and high speed optoelectronic devices. We will examine the impact of several high speed compound semiconductor IC technologies such as SiGe, GaAs, and InP, on the performance of opto-electronic transceivers at data rate of 40 Gbps and 100+ Gbps regime. In this talk, we will utilize a 40 Gbps opto-electronics transceiver as an example to illustrate the advantages and limitations of these compound semiconductor IC technologies.

AB - For high speed TDM optical links, high speed physical layer electronics provides critical interface between the local electronic data traffic and high speed optoelectronic devices. We will examine the impact of several high speed compound semiconductor IC technologies such as SiGe, GaAs, and InP, on the performance of opto-electronic transceivers at data rate of 40 Gbps and 100+ Gbps regime. In this talk, we will utilize a 40 Gbps opto-electronics transceiver as an example to illustrate the advantages and limitations of these compound semiconductor IC technologies.

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JO - Technical Digest-International Electron Devices Meeting

JF - Technical Digest-International Electron Devices Meeting

ER -

Semiconductor technologies for high speed optical networking

Abstract

All Science Journal Classification (ASJC) codes

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