Semiconductor technologies for high speed optical networking

Y. K. Chen, Y. Baeyens, C. T. Liu, R. Kopf, R. Hamm, C. Chen, Y. Yang, J. Frackoviak, A. Tate, P. Paschke, J. Weiner, G. Georgiou, P. Roux, V. Houstma

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

For high speed TDM optical links, high speed physical layer electronics provides critical interface between the local electronic data traffic and high speed optoelectronic devices. We will examine the impact of several high speed compound semiconductor IC technologies such as SiGe, GaAs, and InP, on the performance of opto-electronic transceivers at data rate of 40 Gbps and 100+ Gbps regime. In this talk, we will utilize a 40 Gbps opto-electronics transceiver as an example to illustrate the advantages and limitations of these compound semiconductor IC technologies.

Original languageEnglish (US)
Pages (from-to)329-331
Number of pages3
JournalTechnical Digest-International Electron Devices Meeting
DOIs
StatePublished - 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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