Si-SiO2 interface passivation using hydrogen and deuterium implantation

T. Kundu, D. Misra

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Hydrogen/deuterium was implanted in 〈100〉 silicon to passivate dangling bonds at the Si/SiO2 interface when a thin oxide is grown on implanted silicon substrate. It was observed that implantation energy and dose influence the interface passivation. Measured interface states at the Si/SiO2 interface suggest an isotope effect where deuterium implanted devices yielded better interface passivation compared to that of hydrogen implanted devices. Diffusion of implanted hydrogen and deuterium to the interface is affected by the implantation damage.

Original languageEnglish (US)
Pages (from-to)G35-G37
JournalElectrochemical and Solid-State Letters
Issue number2
StatePublished - 2005

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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