Si-SiO₂ interface passivation using hydrogen and deuterium implantation

Keyphrases

• Deuterium 100%
• Si-SiO2 Interface 100%
• Interface Passivation 100%
• Deuterium Implantation 100%
• Hydrogen Implantation 100%
• Implantable Devices 66%
• Silicon Substrate 33%
• (100) Silicon 33%
• Isotope Effect 33%
• Dangling Bonds 33%
• Interface States 33%
• Implanted Silicon 33%
• Thin Oxides 33%
• Passivated 33%
• Implantation Damage 33%
• Implantation Dose 33%
• Implantation Energy 33%

Engineering

• Passivation 100%
• Implanted Device 66%
• Energy Engineering 33%
• Silicon Substrate 33%
• Dangling Bond 33%
• Interface State 33%

Material Science

• Deuterium 100%
• Silicon 50%
• Oxide Compound 25%