Si-SiO2 interface to High-k-Ge/III-V interface: Passivation and reliability

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The Si-SiO2 interface is one of the most important semiconductor-dielectric interfaces that has been studied extensively over many decades. The understanding and control of structural and electronic properties of Si-SiO2 interfaces has provided many clues for technological advancement. The article discusses how the Si-SiO2 interface migrated through the technological landscape like plasma processing damage, hot carrier effects and negative bias temperature instability (NBTI) and subsequent passivation techniques using hydrogen to nitrogen. Introduction of high-k gate dielectrics brought significant attention to the interface between silicon and high-k dielectrics but Si-SiO2 interface continued to be important because of the presence of a SiO2-based interfacial layer. With deposition of high-k gate dielectrics high carrier mobility substrates (Ge/III-V) are currently being considered as the channel materials. To obtain a high quality interface between the high-k dielectrics and the high mobility substrates some issues like deposition process, precise selection of deposition parameters, predeposition surface treatments, appropriate passivation techniques and subsequent annealing temperatures are also outlined.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
Pages69-84
Number of pages16
Edition3
DOIs
StatePublished - Oct 21 2013
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 17 2013

Publication series

NameECS Transactions
Number3
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/17/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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