Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production

Sudhakar Shet; Todd Deutsch; Heli Wang; Nuggehalli Ravindra; Fa Yan; John Turner; Mowafak Al-Jassim

Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production

Sudhakar Shet, Todd Deutsch, Heli Wang, Nuggehalli Ravindra, Fa Yan, John Turner, Mowafak Al-Jassim

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ZnO thin films with significantly reduced bandgaps were synthesized by co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO, ZnO doped solely with N, ZnO:N, and Al doped ZnO, ZnO:Al at the same growth conditions. Furthermore, ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents compared to other films grown under similar growth conditions, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.

Original language	English (US)
Title of host publication	Materials Science and Technology Conference and Exhibition 2010, MS and T'10
Pages	1080-1088
Number of pages	9
State	Published - 2010
Event	Materials Science and Technology Conference and Exhibition 2010, MS and T'10 - Houston, TX, United States Duration: Oct 17 2010 → Oct 21 2010

Publication series

Name	Materials Science and Technology Conference and Exhibition 2010, MS and T'10
Volume	2

Other

Other	Materials Science and Technology Conference and Exhibition 2010, MS and T'10
Country/Territory	United States
City	Houston, TX
Period	10/17/10 → 10/21/10

All Science Journal Classification (ASJC) codes

Materials Science (miscellaneous)

Keywords

Band gap
Co-doping
Crystallinity
Gas ambient
N concentration
Photoelectrochemical
RF power
Sputter
Substrate temperature
ZnO
ZnO:(Al,N)

Cite this

Shet, S., Deutsch, T., Wang, H., Ravindra, N., Yan, F., Turner, J., & Al-Jassim, M. (2010). Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production. In Materials Science and Technology Conference and Exhibition 2010, MS and T'10 (pp. 1080-1088). (Materials Science and Technology Conference and Exhibition 2010, MS and T'10; Vol. 2).

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title = "Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production",

abstract = "ZnO thin films with significantly reduced bandgaps were synthesized by co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO, ZnO doped solely with N, ZnO:N, and Al doped ZnO, ZnO:Al at the same growth conditions. Furthermore, ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents compared to other films grown under similar growth conditions, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.",

keywords = "Band gap, Co-doping, Crystallinity, Gas ambient, N concentration, Photoelectrochemical, RF power, Sputter, Substrate temperature, ZnO, ZnO:(Al,N)",

author = "Sudhakar Shet and Todd Deutsch and Heli Wang and Nuggehalli Ravindra and Fa Yan and John Turner and Mowafak Al-Jassim",

year = "2010",

language = "English (US)",

isbn = "9781617820328",

series = "Materials Science and Technology Conference and Exhibition 2010, MS and T'10",

pages = "1080--1088",

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note = "Materials Science and Technology Conference and Exhibition 2010, MS and T'10 ; Conference date: 17-10-2010 Through 21-10-2010",

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Shet, S, Deutsch, T, Wang, H, Ravindra, N, Yan, F, Turner, J & Al-Jassim, M 2010, Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production. in Materials Science and Technology Conference and Exhibition 2010, MS and T'10. Materials Science and Technology Conference and Exhibition 2010, MS and T'10, vol. 2, pp. 1080-1088, Materials Science and Technology Conference and Exhibition 2010, MS and T'10, Houston, TX, United States, 10/17/10.

Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production. / Shet, Sudhakar; Deutsch, Todd; Wang, Heli et al.
Materials Science and Technology Conference and Exhibition 2010, MS and T'10. 2010. p. 1080-1088 (Materials Science and Technology Conference and Exhibition 2010, MS and T'10; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production

AU - Shet, Sudhakar

AU - Deutsch, Todd

AU - Wang, Heli

AU - Ravindra, Nuggehalli

AU - Yan, Fa

AU - Turner, John

AU - Al-Jassim, Mowafak

PY - 2010

Y1 - 2010

N2 - ZnO thin films with significantly reduced bandgaps were synthesized by co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO, ZnO doped solely with N, ZnO:N, and Al doped ZnO, ZnO:Al at the same growth conditions. Furthermore, ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents compared to other films grown under similar growth conditions, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.

AB - ZnO thin films with significantly reduced bandgaps were synthesized by co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO, ZnO doped solely with N, ZnO:N, and Al doped ZnO, ZnO:Al at the same growth conditions. Furthermore, ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents compared to other films grown under similar growth conditions, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.

KW - Band gap

KW - Co-doping

KW - Crystallinity

KW - Gas ambient

KW - N concentration

KW - Photoelectrochemical

KW - RF power

KW - Sputter

KW - Substrate temperature

KW - ZnO

KW - ZnO:(Al,N)

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M3 - Conference contribution

AN - SCOPUS:79952653284

SN - 9781617820328

T3 - Materials Science and Technology Conference and Exhibition 2010, MS and T'10

SP - 1080

EP - 1088

BT - Materials Science and Technology Conference and Exhibition 2010, MS and T'10

T2 - Materials Science and Technology Conference and Exhibition 2010, MS and T'10

Y2 - 17 October 2010 through 21 October 2010

ER -

Shet S, Deutsch T, Wang H, Ravindra N, Yan F, Turner J et al. Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production. In Materials Science and Technology Conference and Exhibition 2010, MS and T'10. 2010. p. 1080-1088. (Materials Science and Technology Conference and Exhibition 2010, MS and T'10).

Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production

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All Science Journal Classification (ASJC) codes

Keywords

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