Significantly bandgap-reduced and enhanced PEC response of Al and N co-doped ZnO:(Al,N) films for solar driven hydrogen production

Sudhakar Shet, Todd Deutsch, Heli Wang, Nuggehalli Ravindra, Fa Yan, John Turner, Mowafak Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnO thin films with significantly reduced bandgaps were synthesized by co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO, ZnO doped solely with N, ZnO:N, and Al doped ZnO, ZnO:Al at the same growth conditions. Furthermore, ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents compared to other films grown under similar growth conditions, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
Pages1080-1088
Number of pages9
StatePublished - Dec 1 2010
EventMaterials Science and Technology Conference and Exhibition 2010, MS and T'10 - Houston, TX, United States
Duration: Oct 17 2010Oct 21 2010

Publication series

NameMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
Volume2

Other

OtherMaterials Science and Technology Conference and Exhibition 2010, MS and T'10
CountryUnited States
CityHouston, TX
Period10/17/1010/21/10

All Science Journal Classification (ASJC) codes

  • Materials Science (miscellaneous)

Keywords

  • Band gap
  • Co-doping
  • Crystallinity
  • Gas ambient
  • N concentration
  • Photoelectrochemical
  • RF power
  • Sputter
  • Substrate temperature
  • ZnO
  • ZnO:(Al,N)

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