Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties

Bhushan Sopori, Yi Zhang, N. M. Ravindra

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

Hydrogen is an electronically active impurity in Si with some unique properties-it can passivate other impurities and defects, both at the interface and in the bulk. Controlled introduction of H can lower interface state density, and thereby improve Schottky and MOS devices, and can reduce bulk recombination to increase minority-carrier-controlled device performance. However, excess H can also introduce defects that can be detrimental to the device properties. Although H is typically introduced by exposing the device to a flux of atomic species, a suitable device configuration can be passivated by thermal treatment in forming gas. This paper addresses some basic issues of device processing in H ambient to improve device performance.

Original languageEnglish (US)
Pages (from-to)1616-1627
Number of pages12
JournalJournal of Electronic Materials
Volume30
Issue number12
DOIs
StatePublished - 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Defects
  • Hydrogen
  • Impurities
  • Passivation
  • Solar cells

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