TY - JOUR
T1 - Silicon-germanium nanostructures for light emitters and on-chip optical interconnects
AU - Tsybeskov, Leonid
AU - Lockwood, David J.
N1 - Funding Information:
Manuscript received February 1, 2009; revised March 18, 2009. Current version published June 12, 2009. This work was supported by the National Science Foundation, Intel Corporation, Semiconductor Research Corporation, and New Jersey Institute of Technology. L. Tsybeskov is with the Electrical and Computer Engineering Department, New Jersey Institute of Technology, Newark, NJ 07102 USA (e-mail: [email protected]). D. J. Lockwood is with the National Research Council, Ottawa, ON, Canada (e-mail: [email protected]).
PY - 2009/7
Y1 - 2009/7
N2 - In this paper, we review the present status of light emitters based on SiGe nanostructures. In order to be commercially valuable, these light emitters should be efficient, fast, operational at room temperature, and, perhaps most important, compatible with the "mainstream" complementary metal-oxide-semiconductor (CMOS) technology. Another important requirement is in the emission wavelength, which should match the optical waveguide low-loss spectral region, i.e., 1.3-1.6 μm. Among other approaches, epitaxially grown Si/SiGe quantum wells and quantum dot/quantum well complexes produce efficient photoluminescence and electroluminescence in the required spectral range. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency and a long carrier radiative lifetime. The latest progress in the understanding of physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters for on-chip optical interconnects is proposed.
AB - In this paper, we review the present status of light emitters based on SiGe nanostructures. In order to be commercially valuable, these light emitters should be efficient, fast, operational at room temperature, and, perhaps most important, compatible with the "mainstream" complementary metal-oxide-semiconductor (CMOS) technology. Another important requirement is in the emission wavelength, which should match the optical waveguide low-loss spectral region, i.e., 1.3-1.6 μm. Among other approaches, epitaxially grown Si/SiGe quantum wells and quantum dot/quantum well complexes produce efficient photoluminescence and electroluminescence in the required spectral range. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency and a long carrier radiative lifetime. The latest progress in the understanding of physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters for on-chip optical interconnects is proposed.
KW - Electroluminescence
KW - Germanium
KW - Light emission
KW - Nanoclusters
KW - Nanostructures
KW - Photoluminescence
KW - Quantum dots
KW - Quantum wells
KW - Silicon
KW - Silicon-germanium
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U2 - 10.1109/JPROC.2009.2020711
DO - 10.1109/JPROC.2009.2020711
M3 - Article
AN - SCOPUS:67449136398
SN - 0018-9219
VL - 97
SP - 1284
EP - 1303
JO - Proceedings of the IEEE
JF - Proceedings of the IEEE
IS - 7
M1 - 5075757
ER -