Silicon-germanium nanostructures for on-chip optical interconnects

L. Tsybeskov, E. K. Lee, H. Y. Chang, D. J. Lockwood, J. M. Baribeau, X. Wu, T. I. Kamins

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Silicon-germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and three-dimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3-1.6 μm. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects.

Original languageEnglish (US)
Pages (from-to)1015-1027
Number of pages13
JournalApplied Physics A: Materials Science and Processing
Volume95
Issue number4
DOIs
StatePublished - Jun 2009

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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