Silicon-germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and three-dimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3-1.6 μm. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects.
|Original language||English (US)|
|Number of pages||13|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Jun 2009|
All Science Journal Classification (ASJC) codes
- Materials Science(all)