Silicon nanoelectronics and beyond: An overview and recent developments

N. M. Ravindra, Vishal R. Mehta, Sudhakar Shet

Research output: Contribution to journalReview articlepeer-review

3 Scopus citations

Abstract

This year marks the 40th anniversary of the invention of the first beam-lead device by Lepselter et al. Lepselter and coworkers proposed a method of fabricating a new semiconductor device structure and its application to high-frequency silicon switching transistors and ultra-high-speed integrated circuits. Beam-lead technology, also known as air-bridge technology, has established itself for its unsurpassed reliability in high-frequency silicon switching transistors and ultra-high-speed integrated circuits for telecommunications and missile systems. The beam-lead device became the first example of a commercial microelectromechanical structure (MEMS). Since its inception, MEMS has taken advantage of the evolving silicon technology, resulting in today's nanoelectromechanical structure and nanooptomechanical structure. In this paper, an overview of recent developments of silicon nanoelectronics is presented.

Original languageEnglish (US)
Pages (from-to)16-20
Number of pages5
JournalJOM
Volume57
Issue number6
DOIs
StatePublished - Jun 2005

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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