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Silicon Oxidation in the Thin Oxide Regime
T. Dutta,
N. M. Ravindra
Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
5
Scopus citations
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Engineering & Materials Science
Oxidation
100%
Oxides
97%
Silicon
89%
Rate constants
55%
Oxygen
54%
Ellipsometry
38%
Silicon oxides
32%
Gate dielectrics
32%
MOS devices
31%
Transmission electron microscopy
23%
Engineers
15%
Hot Temperature
10%
Physics & Astronomy
oxidation
83%
oxides
70%
silicon
60%
oxygen
40%
very large scale integration
27%
silicon oxides
23%
engineers
23%
ellipsometry
22%
transmission electron microscopy
14%
kinetics
13%
performance
9%
simulation
8%
Chemical Compounds
Oxide
61%
Oxidation Reaction
51%
Dioxygen
41%
Rate Constant
37%
Silicon Oxide
35%
Ellipsometry
31%
Dielectric Material
24%
Transmission Electron Microscopy
18%
Simulation
17%