Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications

G. Purnachandra Rao, Nistha Baruah, Trupti Ranjan Lenka, Rajan Singh, Sharif Md Sadaf, Hieu Pham Trung Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.

Original languageEnglish (US)
Title of host publication2022 IEEE International Conference on Emerging Electronics, ICEE 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665491853
DOIs
StatePublished - 2022
Event2022 IEEE International Conference on Emerging Electronics, ICEE 2022 - Bangalore, India
Duration: Dec 11 2022Dec 14 2022

Publication series

Name2022 IEEE International Conference on Emerging Electronics, ICEE 2022

Conference

Conference2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Country/TerritoryIndia
CityBangalore
Period12/11/2212/14/22

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Instrumentation

Keywords

  • 2DEG
  • Ga203
  • GaN
  • HEMT
  • RF
  • Terahertz

Fingerprint

Dive into the research topics of 'Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications'. Together they form a unique fingerprint.

Cite this