Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications

G. Purnachandra Rao; Nistha Baruah; Trupti Ranjan Lenka; Rajan Singh; Sharif Md Sadaf; Hieu Pham Trung Nguyen

doi:10.1109/ICEE56203.2022.10118010

Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃Substrate for Emerging Terahertz Applications

G. Purnachandra Rao, Nistha Baruah, Trupti Ranjan Lenka, Rajan Singh, Sharif Md Sadaf, Hieu Pham Trung Nguyen

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.

Original language	English (US)
Title of host publication	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665491853
DOIs	https://doi.org/10.1109/ICEE56203.2022.10118010
State	Published - 2022
Event	2022 IEEE International Conference on Emerging Electronics, ICEE 2022 - Bangalore, India Duration: Dec 11 2022 → Dec 14 2022

Publication series

Name	2022 IEEE International Conference on Emerging Electronics, ICEE 2022

Conference

Conference	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Country/Territory	India
City	Bangalore
Period	12/11/22 → 12/14/22

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Instrumentation

Keywords

2DEG
Ga203
GaN
HEMT
RF
Terahertz

Access to Document

10.1109/ICEE56203.2022.10118010

Cite this

Rao, G. P., Baruah, N., Lenka, T. R., Singh, R., Sadaf, S. M., & Nguyen, H. P. T. (2022). Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃Substrate for Emerging Terahertz Applications. In 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 (2022 IEEE International Conference on Emerging Electronics, ICEE 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEE56203.2022.10118010

Rao, G. Purnachandra ; Baruah, Nistha ; Lenka, Trupti Ranjan et al. / Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃Substrate for Emerging Terahertz Applications. 2022 IEEE International Conference on Emerging Electronics, ICEE 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE International Conference on Emerging Electronics, ICEE 2022).

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title = "Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications",

abstract = "This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.",

keywords = "2DEG, Ga203, GaN, HEMT, RF, Terahertz",

author = "Rao, {G. Purnachandra} and Nistha Baruah and Lenka, {Trupti Ranjan} and Rajan Singh and Sadaf, {Sharif Md} and Nguyen, {Hieu Pham Trung}",

note = "Funding Information: Science and Engineering Research Board, Government of India sponsored MATRICS Project No. MTR/2021/000370. Funding Information: ACKNOWLEDGMENT The authors acknowledge DST (Department of Science and Technology)-SERB (Science and Engineering Research Board), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project no. MTR/2021/000370 for support. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 ; Conference date: 11-12-2022 Through 14-12-2022",

year = "2022",

doi = "10.1109/ICEE56203.2022.10118010",

language = "English (US)",

series = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",

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}

Rao, GP, Baruah, N, Lenka, TR, Singh, R, Sadaf, SM & Nguyen, HPT 2022, Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃Substrate for Emerging Terahertz Applications. in 2022 IEEE International Conference on Emerging Electronics, ICEE 2022. 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, Bangalore, India, 12/11/22. https://doi.org/10.1109/ICEE56203.2022.10118010

Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃Substrate for Emerging Terahertz Applications. / Rao, G. Purnachandra; Baruah, Nistha; Lenka, Trupti Ranjan et al.
2022 IEEE International Conference on Emerging Electronics, ICEE 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE International Conference on Emerging Electronics, ICEE 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications

AU - Rao, G. Purnachandra

AU - Baruah, Nistha

AU - Lenka, Trupti Ranjan

AU - Singh, Rajan

AU - Sadaf, Sharif Md

AU - Nguyen, Hieu Pham Trung

N1 - Funding Information: Science and Engineering Research Board, Government of India sponsored MATRICS Project No. MTR/2021/000370. Funding Information: ACKNOWLEDGMENT The authors acknowledge DST (Department of Science and Technology)-SERB (Science and Engineering Research Board), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project no. MTR/2021/000370 for support. Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.

AB - This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.

KW - 2DEG

KW - Ga203

KW - GaN

KW - HEMT

KW - RF

KW - Terahertz

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U2 - 10.1109/ICEE56203.2022.10118010

DO - 10.1109/ICEE56203.2022.10118010

M3 - Conference contribution

AN - SCOPUS:85160518193

T3 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

BT - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022

Y2 - 11 December 2022 through 14 December 2022

ER -

Rao GP, Baruah N, Lenka TR, Singh R, Sadaf SM, Nguyen HPT. Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃Substrate for Emerging Terahertz Applications. In 2022 IEEE International Conference on Emerging Electronics, ICEE 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 IEEE International Conference on Emerging Electronics, ICEE 2022). doi: 10.1109/ICEE56203.2022.10118010