TY - GEN
T1 - Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications
AU - Rao, G. Purnachandra
AU - Baruah, Nistha
AU - Lenka, Trupti Ranjan
AU - Singh, Rajan
AU - Sadaf, Sharif Md
AU - Nguyen, Hieu Pham Trung
N1 - Funding Information:
Science and Engineering Research Board, Government of India sponsored MATRICS Project No. MTR/2021/000370.
Funding Information:
ACKNOWLEDGMENT The authors acknowledge DST (Department of Science and Technology)-SERB (Science and Engineering Research Board), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project no. MTR/2021/000370 for support.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.
AB - This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.
KW - 2DEG
KW - Ga203
KW - GaN
KW - HEMT
KW - RF
KW - Terahertz
UR - http://www.scopus.com/inward/record.url?scp=85160518193&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85160518193&partnerID=8YFLogxK
U2 - 10.1109/ICEE56203.2022.10118010
DO - 10.1109/ICEE56203.2022.10118010
M3 - Conference contribution
AN - SCOPUS:85160518193
T3 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022
BT - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Y2 - 11 December 2022 through 14 December 2022
ER -