@inproceedings{b255cd357b664b88b4fc5cc22257eb2c,
title = "Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications",
abstract = "This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.",
keywords = "2DEG, Ga203, GaN, HEMT, RF, Terahertz",
author = "Rao, {G. Purnachandra} and Nistha Baruah and Lenka, {Trupti Ranjan} and Rajan Singh and Sadaf, {Sharif Md} and Nguyen, {Hieu Pham Trung}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 ; Conference date: 11-12-2022 Through 14-12-2022",
year = "2022",
doi = "10.1109/ICEE56203.2022.10118010",
language = "English (US)",
series = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",
address = "United States",
}