In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to obtain diminished leakage current (10−16A/mm), RON (1.27 Ω-mm), PFOM (power figure of merit) (4373 MW/cm3), breakdown voltage (108 V), and excellent DC characteristics using Atlas TCAD. It is observed that the obtained results are better than those reported in recent studies. These RON and PFOM demonstrate that the suggested device structure on the preferred β-Ga2O3 substrate is an excellent contender for future high-power nanoelectronics applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Recessed Gate