Simulation modelling of III-nitride/β-Ga₂O₃ HEMT for emerging high-power nanoelectronics applications

In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga₂O₃ substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to obtain diminished leakage current (10⁻¹⁶A/mm), R_ON (1.27 Ω-mm), PFOM (power figure of merit) (4373 MW/cm³), breakdown voltage (108 V), and excellent DC characteristics using Atlas TCAD. It is observed that the obtained results are better than those reported in recent studies. These R_ON and PFOM demonstrate that the suggested device structure on the preferred β-Ga₂O₃ substrate is an excellent contender for future high-power nanoelectronics applications.