Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications

G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to obtain diminished leakage current (10−16A/mm), RON (1.27 Ω-mm), PFOM (power figure of merit) (4373 MW/cm3), breakdown voltage (108 V), and excellent DC characteristics using Atlas TCAD. It is observed that the obtained results are better than those reported in recent studies. These RON and PFOM demonstrate that the suggested device structure on the preferred β-Ga2O3 substrate is an excellent contender for future high-power nanoelectronics applications.

Original languageEnglish (US)
Pages (from-to)876-884
Number of pages9
JournalJournal of the Korean Physical Society
Volume81
Issue number9
DOIs
StatePublished - Nov 2022

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Keywords

  • 2DEG
  • AlGaN
  • GaN
  • HEMT
  • Recessed Gate
  • TCAD
  • β-GaO

Fingerprint

Dive into the research topics of 'Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications'. Together they form a unique fingerprint.

Cite this