TY - JOUR
T1 - Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications
AU - Rao, G. Purnachandra
AU - Lenka, Trupti Ranjan
AU - Singh, Rajan
AU - Nguyen, Hieu Pham Trung
N1 - Funding Information:
The authors acknowledge DST (Department of Science and Technology)-SERB (Science and Engineering Research Board), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project no. MTR/2021/000370 for support.
Publisher Copyright:
© 2022, The Korean Physical Society.
PY - 2022/11
Y1 - 2022/11
N2 - In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to obtain diminished leakage current (10−16A/mm), RON (1.27 Ω-mm), PFOM (power figure of merit) (4373 MW/cm3), breakdown voltage (108 V), and excellent DC characteristics using Atlas TCAD. It is observed that the obtained results are better than those reported in recent studies. These RON and PFOM demonstrate that the suggested device structure on the preferred β-Ga2O3 substrate is an excellent contender for future high-power nanoelectronics applications.
AB - In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to obtain diminished leakage current (10−16A/mm), RON (1.27 Ω-mm), PFOM (power figure of merit) (4373 MW/cm3), breakdown voltage (108 V), and excellent DC characteristics using Atlas TCAD. It is observed that the obtained results are better than those reported in recent studies. These RON and PFOM demonstrate that the suggested device structure on the preferred β-Ga2O3 substrate is an excellent contender for future high-power nanoelectronics applications.
KW - 2DEG
KW - AlGaN
KW - GaN
KW - HEMT
KW - Recessed Gate
KW - TCAD
KW - β-GaO
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U2 - 10.1007/s40042-022-00603-x
DO - 10.1007/s40042-022-00603-x
M3 - Article
AN - SCOPUS:85137747305
SN - 0374-4884
VL - 81
SP - 876
EP - 884
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 9
ER -