TY - JOUR
T1 - Simulation modelling of III-Nitride/β-Ga2O3 Nano-HEMT for microwave and millimetre wave applications
AU - Rao, G. Purnachandra
AU - Singh, Rajan
AU - Lenka, Trupti Ranjan
AU - Boukortt, Nour El I.
AU - Nguyen, Hieu Pham Trung
N1 - Funding Information:
The authors acknowledge DST (Department of Science and Technology)‐SERB (Science and Engineering Research Board), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project no. MTR/2021/000370 for support.
Publisher Copyright:
© 2022 Wiley Periodicals LLC.
PY - 2022/12
Y1 - 2022/12
N2 - In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga2O3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (fT, fmax) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These fT, fmax and JFOM demonstrate that the proposed HEMT on β-Ga2O3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.
AB - In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga2O3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (fT, fmax) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These fT, fmax and JFOM demonstrate that the proposed HEMT on β-Ga2O3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.
KW - AlGaN
KW - f
KW - f
KW - GaN
KW - HEMT
KW - Johnson figure of merit
KW - β-GaO recess gate
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U2 - 10.1002/mmce.23416
DO - 10.1002/mmce.23416
M3 - Article
AN - SCOPUS:85138145193
SN - 1096-4290
VL - 32
JO - International Journal of RF and Microwave Computer-Aided Engineering
JF - International Journal of RF and Microwave Computer-Aided Engineering
IS - 12
M1 - e23416
ER -