Simulation modelling of III-Nitride/β-Ga2O3 Nano-HEMT for microwave and millimetre wave applications

G. Purnachandra Rao, Rajan Singh, Trupti Ranjan Lenka, Nour El I. Boukortt, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga2O3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (fT, fmax) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These fT, fmax and JFOM demonstrate that the proposed HEMT on β-Ga2O3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.

Original languageEnglish (US)
Article numbere23416
JournalInternational Journal of RF and Microwave Computer-Aided Engineering
Issue number12
StatePublished - Dec 2022

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering


  • AlGaN
  • GaN
  • HEMT
  • Johnson figure of merit
  • f
  • f
  • β-GaO recess gate


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