TY - JOUR
T1 - Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers
T2 - a comparative study
AU - Panda, Deepak Kumar
AU - Singh, Rajan
AU - Lenka, Trupti Ranjan
AU - Pham, Thi Tan
AU - Velpula, Ravi Teja
AU - Jain, Barsha
AU - Thang Bui, Ha Quoc
AU - Trung Nguyen, Hieu Pham
N1 - Publisher Copyright:
© The Institution of Engineering and Technology 2020
PY - 2020/10/1
Y1 - 2020/10/1
N2 - In this study, a 60 nm gate length double-gate AlGaN/GaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed and different electrical characteristics, such as DC, small-signal, radio-frequency (RF) and high-frequency noise performances of the devices are characterised through TCAD device simulations. The results of double-gate MOS-HEMT are compared with the TCAD simulation results as well as with available experimental data of single-gate AlGaN/GaN MOS-HEMT having a similar gate length available from the literature. It is observed that the double-gate AlGaN/GaN/AlGaN MOS-HEMT shows good sub-threshold slope, improved ON current, short-channel effect immunity, improved RF and noise performance. A look-up table-based Verilog-A model is developed for both devices and the models are incorporated into the Cadence EDA tool to utilise the proposed device in circuit simulations. The Verilog-A model is applied to design a 1–20 GHz wideband feedback cascode low-noise amplifier (LNA). Performance variability of LNA due to single- and double-gate MOS-HEMT is also investigated.
AB - In this study, a 60 nm gate length double-gate AlGaN/GaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed and different electrical characteristics, such as DC, small-signal, radio-frequency (RF) and high-frequency noise performances of the devices are characterised through TCAD device simulations. The results of double-gate MOS-HEMT are compared with the TCAD simulation results as well as with available experimental data of single-gate AlGaN/GaN MOS-HEMT having a similar gate length available from the literature. It is observed that the double-gate AlGaN/GaN/AlGaN MOS-HEMT shows good sub-threshold slope, improved ON current, short-channel effect immunity, improved RF and noise performance. A look-up table-based Verilog-A model is developed for both devices and the models are incorporated into the Cadence EDA tool to utilise the proposed device in circuit simulations. The Verilog-A model is applied to design a 1–20 GHz wideband feedback cascode low-noise amplifier (LNA). Performance variability of LNA due to single- and double-gate MOS-HEMT is also investigated.
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U2 - 10.1049/iet-cds.2020.0015
DO - 10.1049/iet-cds.2020.0015
M3 - Article
AN - SCOPUS:85095795185
SN - 1751-858X
VL - 14
SP - 1018
EP - 1025
JO - IET Circuits, Devices and Systems
JF - IET Circuits, Devices and Systems
IS - 7
ER -