Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: Their effect on SiGe light emission

D. J. Lockwood; X. Wu; J. M. Baribeau; S. A. Mala; X. Wang; L. Tsybeskov

doi:10.1149/07501.0077ecst

Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: Their effect on SiGe light emission

D. J. Lockwood, X. Wu, J. M. Baribeau, S. A. Mala, X. Wang, L. Tsybeskov

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in one, two, and three dimensions. The interface sharpness is influenced by many factors including growth conditions, strain, and thermal processing, which can make it difficult to attain the desired structures. This is certainly the case for nanostructure confinement in one dimension. However, axial Si/Ge nanowire heterojunctions with a Si/Ge nanowire diameter in the range 50-120 nm produce a strong photoluminescence signal associated with band-to-band electron-hole recombination at the nanowire heterojunction that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, experiments show that two quite different SiGe nanostructures incorporated into a Si_0.6Ge_0.4 wavy structure exhibit an intense PL signal with a characteristic non-exponential decay time that is remarkably shorter (as much as 1000 times) than that found in conventional Si/SiGe nanostructures.

Original language	English (US)
Title of host publication	Pits and Pores 7
Subtitle of host publication	Nanomaterials - Fabrication Processes, Properties, and Applications
Editors	P. Granitzer, R. Boukherroub, D. J. Lockwood, H. Masuda
Publisher	Electrochemical Society Inc.
Pages	77-96
Number of pages	20
Edition	1
ISBN (Electronic)	9781607687184, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07501.0077ecst
State	Published - 2016
Event	Symposium on Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: Oct 2 2016 → Oct 7 2016

Publication series

Name	ECS Transactions
Number	1
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	10/2/16 → 10/7/16

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/07501.0077ecst

Cite this

Lockwood, D. J., Wu, X., Baribeau, J. M., Mala, S. A., Wang, X., & Tsybeskov, L. (2016). Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: Their effect on SiGe light emission. In P. Granitzer, R. Boukherroub, D. J. Lockwood, & H. Masuda (Eds.), Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications (1 ed., pp. 77-96). (ECS Transactions; Vol. 75, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/07501.0077ecst

Lockwood, D. J. ; Wu, X. ; Baribeau, J. M. et al. / Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures : Their effect on SiGe light emission. Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications. editor / P. Granitzer ; R. Boukherroub ; D. J. Lockwood ; H. Masuda. 1. ed. Electrochemical Society Inc., 2016. pp. 77-96 (ECS Transactions; 1).

@inproceedings{8fb2b3e480e247c99bd1302131d508ea,

title = "Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: Their effect on SiGe light emission",

abstract = "The nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in one, two, and three dimensions. The interface sharpness is influenced by many factors including growth conditions, strain, and thermal processing, which can make it difficult to attain the desired structures. This is certainly the case for nanostructure confinement in one dimension. However, axial Si/Ge nanowire heterojunctions with a Si/Ge nanowire diameter in the range 50-120 nm produce a strong photoluminescence signal associated with band-to-band electron-hole recombination at the nanowire heterojunction that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, experiments show that two quite different SiGe nanostructures incorporated into a Si0.6Ge0.4 wavy structure exhibit an intense PL signal with a characteristic non-exponential decay time that is remarkably shorter (as much as 1000 times) than that found in conventional Si/SiGe nanostructures.",

author = "Lockwood, {D. J.} and X. Wu and Baribeau, {J. M.} and Mala, {S. A.} and X. Wang and L. Tsybeskov",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

year = "2016",

doi = "10.1149/07501.0077ecst",

language = "English (US)",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "77--96",

editor = "P. Granitzer and R. Boukherroub and Lockwood, {D. J.} and H. Masuda",

booktitle = "Pits and Pores 7",

edition = "1",

}

Lockwood, DJ, Wu, X, Baribeau, JM, Mala, SA, Wang, X & Tsybeskov, L 2016, Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: Their effect on SiGe light emission. in P Granitzer, R Boukherroub, DJ Lockwood & H Masuda (eds), Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications. 1 edn, ECS Transactions, no. 1, vol. 75, Electrochemical Society Inc., pp. 77-96, Symposium on Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07501.0077ecst

Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: Their effect on SiGe light emission. / Lockwood, D. J.; Wu, X.; Baribeau, J. M. et al.
Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications. ed. / P. Granitzer; R. Boukherroub; D. J. Lockwood; H. Masuda. 1. ed. Electrochemical Society Inc., 2016. p. 77-96 (ECS Transactions; Vol. 75, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures

T2 - Symposium on Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications - PRiME 2016/230th ECS Meeting

AU - Lockwood, D. J.

AU - Wu, X.

AU - Baribeau, J. M.

AU - Mala, S. A.

AU - Wang, X.

AU - Tsybeskov, L.

PY - 2016

Y1 - 2016

N2 - The nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in one, two, and three dimensions. The interface sharpness is influenced by many factors including growth conditions, strain, and thermal processing, which can make it difficult to attain the desired structures. This is certainly the case for nanostructure confinement in one dimension. However, axial Si/Ge nanowire heterojunctions with a Si/Ge nanowire diameter in the range 50-120 nm produce a strong photoluminescence signal associated with band-to-band electron-hole recombination at the nanowire heterojunction that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, experiments show that two quite different SiGe nanostructures incorporated into a Si0.6Ge0.4 wavy structure exhibit an intense PL signal with a characteristic non-exponential decay time that is remarkably shorter (as much as 1000 times) than that found in conventional Si/SiGe nanostructures.

AB - The nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in one, two, and three dimensions. The interface sharpness is influenced by many factors including growth conditions, strain, and thermal processing, which can make it difficult to attain the desired structures. This is certainly the case for nanostructure confinement in one dimension. However, axial Si/Ge nanowire heterojunctions with a Si/Ge nanowire diameter in the range 50-120 nm produce a strong photoluminescence signal associated with band-to-band electron-hole recombination at the nanowire heterojunction that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, experiments show that two quite different SiGe nanostructures incorporated into a Si0.6Ge0.4 wavy structure exhibit an intense PL signal with a characteristic non-exponential decay time that is remarkably shorter (as much as 1000 times) than that found in conventional Si/SiGe nanostructures.

UR - http://www.scopus.com/inward/record.url?scp=84991738126&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991738126&partnerID=8YFLogxK

U2 - 10.1149/07501.0077ecst

DO - 10.1149/07501.0077ecst

M3 - Conference contribution

AN - SCOPUS:84991738126

T3 - ECS Transactions

SP - 77

EP - 96

BT - Pits and Pores 7

A2 - Granitzer, P.

A2 - Boukherroub, R.

A2 - Lockwood, D. J.

A2 - Masuda, H.

PB - Electrochemical Society Inc.

Y2 - 2 October 2016 through 7 October 2016

ER -

Lockwood DJ, Wu X, Baribeau JM, Mala SA, Wang X, Tsybeskov L. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: Their effect on SiGe light emission. In Granitzer P, Boukherroub R, Lockwood DJ, Masuda H, editors, Pits and Pores 7: Nanomaterials - Fabrication Processes, Properties, and Applications. 1 ed. Electrochemical Society Inc. 2016. p. 77-96. (ECS Transactions; 1). doi: 10.1149/07501.0077ecst

Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: Their effect on SiGe light emission

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this