Si/SiGe interfaces in three-, two-, and one-dimensional nanostructures and their influence on SiGe light emission

D. J. Lockwood, X. Wu, J. M. Baribeau, S. A. Mala, X. Wang, L. Tsybeskov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The nature of the interfaces between SiGe nanostructures (NSs) and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in one, two, and three dimensions. The interface sharpness is influenced by many factors including growth conditions, strain, and thermal processing, which can make it difficult to attain the desired structures. This is certainly the case forNS confinement in one dimension. However, axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50-120 nm produce a strong PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, experiments show that two quite different SiGe NSs incorporated into a Si0.6Ge0.4 wavy structure exhibit an intense PL signal with a characteristic non-exponential decay time that is remarkably shorter (as much as 1000 times) than that found in conventional Si/SiGe NSs.

Original languageEnglish (US)
Title of host publicationNanotechnology General Session featuring Nanoscale Luminescent Materials 4
EditorsO. M. Leonte, C. Bock, J. Koehne, Z. Chen, P. Mascher, D. J. Lockwood
PublisherElectrochemical Society Inc.
Pages7-25
Number of pages19
Edition34
ISBN (Electronic)9781607687610
ISBN (Print)9781623324032
DOIs
StatePublished - 2016
EventSymposium on Nanotechnology General Session featuring Nanoscale Luminescent Materials 4 - 229th ECS Meeting - San Diego, United States
Duration: May 29 2016Jun 2 2016

Publication series

NameECS Transactions
Number34
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Nanotechnology General Session featuring Nanoscale Luminescent Materials 4 - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period5/29/166/2/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Si/SiGe interfaces in three-, two-, and one-dimensional nanostructures and their influence on SiGe light emission'. Together they form a unique fingerprint.

Cite this