We analyze epitaxially grown InGaN/GaN dot-in-a-wire heterostructures to relate growth and design properties to trends seen in photoluminescence (PL) and resonance Raman spectra. Temperature-dependent PL measurement of these dot-in-a-wire heterostructures illustrate an expected decrease in integrated PL emission and an unusual narrowing of peak width with increasing temperature. Information extracted from Resonance Raman spectra was utilized in a time-dependent model to analyze and to simulate PL spectra. These spectra were found to be in good agreement with the experimental PL data and provided insight into the broadening mechanisms affecting the samples. PL measurements were taken as a function of position on the sample and radial variation of peak energies was observed. This variation was attributed to the radial temperature gradient present during nanowire growth. These additional characteristics of the nanowire heterostructures will allow for increased understanding of these systems potentials for applications in white light emitting diodes.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)