Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures

Yousef Kamali, Brenna R. Walsh, Jonathan Mooney, Hieu Nguyen, Colin Brosseau, Richard Leonelli, Zetian Mi, Patanjali Kambhampati

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We analyze epitaxially grown InGaN/GaN dot-in-a-wire heterostructures to relate growth and design properties to trends seen in photoluminescence (PL) and resonance Raman spectra. Temperature-dependent PL measurement of these dot-in-a-wire heterostructures illustrate an expected decrease in integrated PL emission and an unusual narrowing of peak width with increasing temperature. Information extracted from Resonance Raman spectra was utilized in a time-dependent model to analyze and to simulate PL spectra. These spectra were found to be in good agreement with the experimental PL data and provided insight into the broadening mechanisms affecting the samples. PL measurements were taken as a function of position on the sample and radial variation of peak energies was observed. This variation was attributed to the radial temperature gradient present during nanowire growth. These additional characteristics of the nanowire heterostructures will allow for increased understanding of these systems potentials for applications in white light emitting diodes.

Original languageEnglish (US)
Article number164305
JournalJournal of Applied Physics
Volume114
Issue number16
DOIs
StatePublished - Oct 28 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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