Spin coated Er2O3 - SiO2 films on silicon substrates

S. Abedrabbo, B. Lahlouh, A. T. Fiory, N. M. Ravindra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optically active Er+3 in silica films, which are suitable for silicon-based optical applications, have been prepared by a sol-gel deposition process with high Er atomic concentrations of 6 and 12 %, followed by furnace annealing. Films were characterized for their thickness, index of refraction, and photoluminescence at room temperature. Photoluminescence yield is strongly enhanced for vacuum annealing in the temperature range 500-750 °C. Reasonable room-temperature photoluminescence is also observed for annealing at 1000 °C. These results demonstrate the viability of incorporating Er at high concentrations.

Original languageEnglish (US)
Title of host publicationMaterials Processing and Energy Materials
PublisherMinerals, Metals and Materials Society
Pages151-166
Number of pages16
ISBN (Print)9781118029459
DOIs
StatePublished - Jan 1 2011

Publication series

NameTMS Annual Meeting
Volume1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

Keywords

  • Erbium
  • Photoluminescence
  • Sol-gel
  • Thin films

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