Sputtering of Si with decaborane cluster ions

Cheng Li, Leszek Gladczuk, Marek Sosnowski, Maria A. Albano, Hans Joachim L. Gossmann, Dale C. Jacobson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Decaborane cluster ions (B10Hx+) may play an important role in the manufacturing of future MOS devices, as they facilitate a very shallow implantation of B with relatively high beam energy, which is partitioned among the constituent atoms. While the formation of B-doped shallow junctions in Si has been demonstrated, little is known about other effects of these complex ions on a solid. We have measured the sputtering yield of Si with decaborane cluster ions at 12 keV and demonstrated, by atomic force microscopy of the surface, that their impacts smooth rather than roughen the surface, similarly to much larger Ar cluster ions. This unexpected result has implications for the understanding of the mechanism of impacts of molecular and cluster ions.

Original languageEnglish (US)
Title of host publication2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings
EditorsBob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages583-586
Number of pages4
ISBN (Electronic)0780371550
DOIs
StatePublished - Jan 1 2002
Event2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States
Duration: Sep 22 2002Sep 27 2002

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume22-27-September-2002

Other

Other2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
CountryUnited States
CityTaos
Period9/22/029/27/02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Keywords

  • cluster ions
  • decaborane
  • sputtering

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