@inproceedings{c719082816f045f3a877085ee668ee31,
title = "Sputtering of Si with decaborane cluster ions",
abstract = "Decaborane cluster ions (B10Hx+) may play an important role in the manufacturing of future MOS devices, as they facilitate a very shallow implantation of B with relatively high beam energy, which is partitioned among the constituent atoms. While the formation of B-doped shallow junctions in Si has been demonstrated, little is known about other effects of these complex ions on a solid. We have measured the sputtering yield of Si with decaborane cluster ions at 12 keV and demonstrated, by atomic force microscopy of the surface, that their impacts smooth rather than roughen the surface, similarly to much larger Ar cluster ions. This unexpected result has implications for the understanding of the mechanism of impacts of molecular and cluster ions.",
keywords = "cluster ions, decaborane, sputtering",
author = "Cheng Li and Leszek Gladczuk and Marek Sosnowski and Albano, {Maria A.} and Gossmann, {Hans Joachim L.} and Jacobson, {Dale C.}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 ; Conference date: 22-09-2002 Through 27-09-2002",
year = "2002",
doi = "10.1109/IIT.2002.1258072",
language = "English (US)",
series = "Proceedings of the International Conference on Ion Implantation Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "583--586",
editor = "Bob Brown and Alford, {Terry L.} and Mike Nastasi and Vella, {Michael C.}",
booktitle = "2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings",
address = "United States",
}