Stability studies on 0.79 m2 single junction and tandem a-Si: H PV modules fabricated by a batch process

J. A.Anna Selvan, Yuan Min Li, Alan E. Delahoy, L. Chen, H. Volltrauer, T. Varvar, D. Jackson, N. B. Urli, R. Lyndall, Z. Kiss

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single junction and tandem (a-Si:H/a-Si:H) thin film PV modules were fabricated by a production line large batch process with different process parameters and light soaked in outdoor sunlight. The performances were analyzed and compared with module stability data obtained from a large-area, uniform indoor solar-radiation simulator. Tandem (double junction) modules are notably more stable with higher post-exposure output power compared to single junction modules. Optimizations in a-Si:H deposition have led to typical light-induced degradation of about 10% and 20%, respectively, for tandem and single junction PV modules. Grading scheme at the p-i interface and i-layer growth rate greatly influence the 'stabilized' output power of manufactured a-Si:H PV modules. The presence of carbon in the i-layer resulted in higher initial, but lower degraded, module power for both single junction and tandem modules.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1899-1902
Number of pages4
StatePublished - 2003
Externally publishedYes
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeB

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period5/11/035/18/03

All Science Journal Classification (ASJC) codes

  • General Engineering

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