Abstract
A complete process compatible with conventional Si technology has been developed in order to produce a bipolar light-emitting device. This device consists of a layer of light-emitting porous silicon annealed at high temperature (800-900°C) sandwiched between a p-type Si wafer and a highly doped (n+) polycrystalline Si film. The properties of the electroluminescence (EL) strongly depend on the annealing conditions. Under direct bias, EL is detected at voltages of ∼2 V and current densities J∼1 mA/cm2. The maximum EL intensity is 1 mW/cm2 and the EL can be modulated by a square wave current pulse with frequencies ν≥1 MHz. No degradation has been observed during 1 month of pulsed operation.
Original language | English (US) |
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Pages (from-to) | 2058-2060 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 15 |
DOIs | |
State | Published - 1996 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)